Abstract
According to quantum mechanics, an electron represented by the wave function penetrates into classically forbidden region, thus tunnels through a thin potential barrier without acquiring enough energy to pass over the top. If our discussion is limited to the macroscopic potential barriers in the bulk of solids rather than those on the surface or in the atomic or crystal field, tunneling barriers, which we are familiar with, are classified into two categories:
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1)
interband tunneling in one and the same semiconductor
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2)
tunneling in conductor-insulator-conductor systems, such as MIM (metal-insulator-metal), MIS (metal-insulator-semiconductor or -semimetal), Schottky junctions, etc.
Sponsored in part by the Army Research Office, Durham, N. C., under Contract DA-31-124-ARO-D-478.
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Esaki, L. (1969). Tunneling in Solids. In: Haidemenakis, E.D. (eds) Electronic Structures in Solids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-6537-0_1
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