Abstract
In Chapters I and II it was shown that the surface properties of semiconductor electrodes, i. e., the photopotential, the capacitance, etc., are definite functions of the bulk properties, for example, the concentration of free carriers, diffusion length, etc. Therefore, it is possible to use the measurement of the electrochemical parameters to check the bulk properties of semiconductor materials. Naturally all these characteristics may be determined by a nonelectrochemical method. However, in many cases electrochemical methods have great advantages. This refers primarily to the determination of the characteristics of samples which are intended for use in electrochemical investigations.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Literature Cited
J. F. Dewald, Bell System. Tech. J., 39:615 (1960).
P. Camp, J. Appl. Phys., 25:459 (1954).
B. C. Smith, J. Eleetrochem. Soc., 108:238 (1961).
F. E. Roberts, Solid-State Electron., 1:93 (1960).
A. A. Davydov and V. N. Maslov, Zh. Fiz. Khim. ,37: 778 (1963).
T. Masami, J. Phys. Soc. Japan, 15:2254(1960).
T. Tokuyama, Solid-State Electron., 5:135(1962).
G. Feuillade and S. Marette, J. Chim. Phys., 58:418 (1961).
I. N. Plaksinand R. Sh. Shafeev, Dokl. Akad. Nauk SSSR, 128:777 (1959).
W. Mehl and M. C. Coutts, J. Appl. Phys., 34:2120 (1963).
M. G. Mil’vidskii and A. V. Berkova, Zavodsk. Lab., 27:557 (1961).
B. M. Turovskii, Fiz. Tverd. Tela, 5:1750 (1963).
A. Goetzberger and C. Stephens, J. Electrochem. Soc., 109:604 (1962).
J. J. Oberly, Acta Met., 5:122 (1957).
V. N. Maslov, A. V. Ovodova, and L. V. Nabatova, Kristallografiya, 7:271 (1962); Zavodsk. Lab., 30:1362 (1964).
E. A. Efimov and I. G. Erusalimchik, Zh. Fiz. Khim., 38:589 (1964).
H. Gerischer, Z. Naturforsch., 19a: 553 (1964).
D. Tjapkin and S. Joksimovic-Tjapkin, Tehnika, 13; Electrotehnika, 7: E165 (1958).
G. L. Schnable, U. S. Pat. 2,893,929 (1959); C. A., 53: 18697b (1959);
S. Ratcliffe and J. E. Hughes, Brit. J. Appl. Phys., 12:193 (1961).
R. Glang, J. Electrochem. Soc., 107:356 (1960).
G. Schwabe, Z. Angew. Phys., 14:297(1962).
Yu. V. Pleskov, Dokl. Akad. Nauk SSSR, 143:1399(1962).
J. T. Law and P. S. Meigs, U. S. Pat., 2,837,471(1958); Ref. Zh. Met., 1959:22169.
P. J. Whoriskey, J. Appl. Phys., 29:867(1958).
S. I. Silverman and D. R. Benn, J. Electrochem. Soc., 105:170 (1958).
P. A. Iles and P. J. Coppen, J. Appl. Phys., 29:1514 (1958).
P. A. Iles and P. J. Coppen, Brit. J. Appl. Phys., 11:177 (1960).
D. R. Turner, J. Electrochem. Soc., 106:701(1959).
H. Robbins, J. Electrochem. Soc., 109:63 (1962).
D. R. Turner, J. Electrochem. Soc., 107:810(1960).
E. Billig and J. J. Dowd, Nature, 172:115(1953).
R. W. Jackson, J. Appl. Phys., 27:309 (1956).
C. S. Fuller, U. S. Pat., 2,740,700 (1956); Ref. Zh. Met., 1957:58131.
C. S. Fuller, J. Appl. Phys., 27:553 (1956).
B. A. Joyce, Solid-State Electronics, 5:102(1962).
O. G. Deryagina, E. N. Paleolog, and N. D. Tomashov, Dokl. Akad. Nauk SSSR, 133:388(1960).
J. J. Pankove, RCA Rev., 16:398(1955).
J. J. Pankove, Electrochemistry of Semiconductors (ed. P. J. Holmes), Academic Press, London-New York (1962), p. 290.
J. P. McKelvey and R. L. Longini, J. Appl. Phys., 25: 634 (1954).
G. Wallis and S. Wang, J. Electrochem. Soc., 106:231 (1959).
J. E. Haynes and W. Shockley, Phys. Rev., 81:835(1951).
T. M. Buck and W. H. Brattain, J. Electrochem. Soc., 102:636 (1955).
P. Jacquet, Atomes, 8:183,208(1953).
C. H. Pool, U. S. Pat. 2,763,608 (1956); Ref. Zh. Khim., 1958:43995.
M. V. Sullivan, U. S. Pat. 2,983,655 (1961); Ref. Zh. Khim, 1962:12K207.
B. I. Él’kin, Problems in the Metallurgy and Physics of Semiconductors. Izd. Akad. Nauk SSSR, Moscow (1957), p. 142.
J. I. Carasso and E. A. Speight, Brit. Pat. 861,679 (1961); Ref. Zh. Met., 1961:10G368.
B. H. Claussen, Brit. Pat. 807,297 (1959); Ref. Zh. Met., 1959:24281.
W. Müller and Quadlitz, Ger. Pat. 823,763 (1951); C. A., 47:7461h(1954).
I. Epelboin and M. Froment, J. Phys. Radium (Phys. Appl., Suppl), 18(3):60A (1957).
P. Brouillet and I. Epelboin, Compt. Rend., 237:895 (1953).
D. R. Turner, J. Electrochem. Soc., 105:402 (1958); U. S. Pat. 2,871,174 (1959); Ref. Zh. Khim., 1960:14203.
N. M. Alpatova, A. I. Gorbanev, Yu. M. Kessler, and L. G. Lozhkina, Dokl. Akad. Nauk SSSR, 142:1073 (1962).
L. V. Maslova, O. A. Matveeva, and V. F. Afanas’ev, Fiz. Tverd. Tela, 3:2699 (1961).
J. W. Faust, U. S. Pat. 2,861,931 (1958); Ref. Zh. Khim., 1960:14201.
D. R. Turner, Surface Chemistry of Metals and Semiconductors (ed. H. C. Gatos), Wiley, New York (1960), p. 285.
M. M. Koltun, Zh. Fiz. Khim., 38: 723 (1964).
J. W. Faust, Silicon Carbide. Pergamon Press (1960), p. 403.
M. K. Norr, J. Electrochem. Soc., 109:433(1962).
J. F. Dewald, J. Electrochem. Soc., 104:244(1957).
I. A. Lesk and R. E. Gonzalez, J. Electrochem. Soc., 105:469 (1958).
F. W. Dehmelt, Ger. Pat. 1,001,077(1957); C. A., 53: 1671b (1959).
L. D. Armstrong and P. Kuznetzoff, U. S. Pat. 2,850,444 (1958); Ref. Zh. Met., 1959:26654.
A. Amaya, U. S. Pat. 2,890,159 (1959); C. A., 53:16718b (1959).
V. A. Vulcan, Control Engineering, 9:132 (1962);
A. M. Goodman, Rev. Sci. Instr., 35: 642 (1964).
L. Varettoni, E. T. Casterline, and K. Glicksman, Electrochem. Technol., 2:21(1964).
A. Uhlir, Bell System. Tech. J., 35:333(1956).
W. Rindner and R. C Ellis, J. Electrochem. Soc., 109:537 (1962).
Z. Majewski and I. Klamka, Arch. Elektrotech., 4:379 (1955).
W. Rindner and J. M. Lavine, Solid-State Electron., 2:190 (1961).
A. Uhlir, Rev. Sci. Instr., 26:965 (1955).
N. M. Alpatova, Radiotekhn. i Elektron., 5:1351(1960).
S. Sheff, J. Electrochem. Soc., 108:60C (1961).
J. F. Barry and N. C. Seeley, U. S. Pat. 2,827,427(1958); see [38].
V. I. Savchenko, Author’s Certificate No. 125721 (1959).
M. V. Sullivan, Bell Lab. Record., 39:107 (1961).
M. V. Sullivan, D. L. Klein, R. M. Finne, L. A. Pompliano, and G. A. Kolb, J. Electrochem. Soc., 110:412 (1963).
T. M. Donovan and B. O. Seraphin, J. Electrochem. Soc., 109:877 (1962);
D. Baker and J. R. Tillman, Solid-State Electron., 6: 589 (1963).
Engineering, 191:909 (1961);
A. F. Bogenschutz, Telefunken-Ztg., 36:151(1963).
M. V. Sullivan and G. A. Kolb, J. Electrochem. Soc., 110:585 (1963);
A. Reisman and R. Rohr, J. Electrochem. Soc., 111:425 (1964);
W. G. Oldham, Electrochem. Technol., 3:57 (1965).
W. A. Albers and J. E. Thomas, Bull. Am. Phys. Soc., 3:219 (1958).
W. A. Albers, V. E. Noble, R. P. Poplawsky, and J. E. Thomas, U. S. Dept. Comm., Office Tech. Serv., PB Rept. 161867 (1960); C. A., 56:13664a (1962).
E. Fröschle, Telefunken-Rohre, No. 35:63 (1958).
E. Fröschle, Ger. Pat. 1,044,289 (1958); C. A., 1960: 603.
R. H. Rediker and D. E. Sawyer, Proc. IRE, 45:944 (1957).
J. W. Tiley and R. A. Williams, Proc. IRE, 41:1706 (1953).
G. L. Schnable and W. M. Lilker, Electrochem. Technol., 1:202 (1963).
V. Miles, M. V. Sullivan, and J. H. Eigler, J. Electrochem. Soc., 103:132 (1956).
D. D. Evers, U. S. Pat. 2,767,137 (1956); Ref. Zh. Khim., 1958:43994.
W. E. Bradley, U. S. Pat. 2,846,346 (1958); Ref. Zh. Met., 1959:26649.
J. S. Lamming and G. M. Wells, Brit. Pat. 806346 (1958); Ref. Zh. Khim., 1959:71992.
R. Barrie, F. A. Cunnell, J. T. Edmond, and I. M. Ross, Physica, 20:1087 (1954).
P. F. Schmidt and D. A. Keiper, J. Electrochem. Soc., 106:592 (1959).
P. F. Schmidt and M. Blomgren, J. Electrochem. Soc., 106:694 (1959).
Z. Gragoun and E. Sipek, Bergakademie, 10:78(1958).
K. Hoselitz and T. B. Watkins, Brit. Pat. 807042 (1959); Ref. Zh. Met, 1959:26648.
G. R. Booker and R. Stickler, J. Electrochem. Soc., 109:1167 (1962).
M. Green and P. H. Robinson, J. Electrochem. Soc., 106:253 (1959).
A. Topfer, U. S. Pat. 2,913383 (1959); Ref. Zh. Khim., 1960:93034.
T. A. Kryukova, S. I. Sinyakova, and T. V. Aref’eva, Polarographic Analysis, Goskhimizdat, Moscow (1959).
E. A. Efimov, I. G. Erusalimchik, Electrochemistry of Germanium and Silicon, Goskhimizdat, Moscow (1963).
H. Kaneko and K. Masumoto, J. Japan. Inst. Metals, 22:553 (1958).
R. Monnier and J. C. Giacometti, Helv. Chim. Acta, 47:345,2203 (1964).
M. J. Barbier-Andrieux, Ann. Chim., 10:754(1955).
M. J. Barbier-Andrieux, Compt. Rend., 242:2352 (1956).
G. Rosenberger, Ger. Pat. 939,100 (1956); C. Z., 1958:6642.
D. R. Stern and Q. H. McKenna, U. S. Pat. 2,892,763 (1959); C. A., 53:16770h (1959).
G. Busch, R. Kern, and E. Steigmeier, Proc. 9th CITCE Meeting, London (1959), p. 425;
A. D. Styrkas, Zh. Prikl. Khim., 37:2431(1964).
J. O’M. Bockris, J. Diaz, and M. Green, Electrochim. Acta, 4:362 (1961).
C. G. Fink and V. M. Dokras, J. Electrochem. Soc., 95:80 (1949).
S. I. Sklyarenko, I. I. Lavrov, and S. V. Yakobson, Izv. Vysshikh. Uchebn. Zavedenii Tsvetn. Met., 1962:129
G. Szekely, J. Electrochem. Soc., 98:318 (1951).
Brit. Pat. 711,065 (1954); C. A., 48:13493i (1954);
Machinery (London), 83: 824 (1953); Ref. Zh. Khim., 1954:45240.
V. V. Ostroumov, Zh. Prikl. Khim., 37:1483 (1964);
V. V. Ostroumov and G. V. Anan’eva, Zh. Prikl. Khim., 37:1612 (1964).
A. N. Sysoev and N. N. Gavyrina, Zh. Prikl. Khim., 34:2001 (1961).
E. H. Borneman, R. F. Schwarz, and J. J. Stickler, J. Appl. Phys., 26:1021(1955).
E. C. Wurst and E. H. Bornemann, J. Appl. Phys., 28:235 (1957).
D. R. Turner, J. Electrochem. Soc., 106:786 (1959).
R. A. Ehrhardt, U. S. Pat. 2,753,299 (1956); C. A., 50:12704i (1956).
A. R. Plummer, Electrochemistry of Semiconductors (ed. P. J. Holmes). Academic Press, London-New York (1962), p. 61.
M. C. Waltz, U. S. Pat. 2,814,589 (1957); Ref. Zh. Khim., 1959:32036.
W. Mehl, H. F. Gossenberger, and E. Heipest, J. Electrochem. Soc., 110:239 (1963);
V. V. Ostroumov, Elektrokhimiya, 1:304(1965).
D. P. Zosimovich and V. D. Nemtsov, Ukr. Khim. Zh., 30:59 (1964).
J. Roschen, U. S. Pat. 2,906,647(1959). C. A., 54: 3012b (1960).
W. Rindner and J. M. Lavlne, Solid-State Electron., 5:85 (1962).
W. Rindner and J. M. Lavine, J. Electrochem. Soc., 108:869 (1961).
E. M. Zimmerman, U. S. Pat. 2,873,232 (1959); C. A., 53:8893a (1959).
W. J. Hillegas and G. L. Schnable, Electrochem. Technol., 1:228 (1963).
R. A. Williams, U. S. Pat. 2,945,789 (1960); Ref. Zh. Khim., 1961:16K190.
M. V. Sullivan and J. H. Eigler, J. Electrochem. Soc., 104:226 (1957).
D. R. Turner and H. A. Sauer, J. Electrochem. Soc., 107:250 (1960).
G. M. Krembs and M. M. Schlacter, J. Electrochem. Soc., 111:417 (1964);
J. W. Faust, J. Electrochem. Soc., 112:114 (1965).
O. M. Stuetzer, Proc. Inst. Radio Engrs., 40:1377 (1952).
C. G. B. Garrett and W. H. Brattain, Phys. Rev., 95: 1091 (1954).
Electronics, 1961(18): 11.
K. E. Plain and R. H. Bube, J. Electrochem. Soc., 111:751 (1964).
J. F. Dewald, J. Electrochem. Soc., 105:105C (1958).
R. Williams, J. Phys. Chem. Solids, 22:129 (1961).
L. S. Berman, Nonlinear Semiconductor Capacitance. Fizmatgiz, Moscow (1963).
V. A. Tyagai, Author’s Certificate No. 166074 (1964).
Additional Literature
Antonov, A. S., B. P. Osipenko, and L. G. Yuskeselieva, Mechanism of showing up junctions in silicon p-i-n detectors by electrochemical deposition of copper, Zh. Fiz. Khim., 39:2252 (1965).
Berkova, A. V., M. G. Mil’vidsk Li, and V. B. Osvenskii, Detecting nonuniformities in the distribution of impurities in gallium arsenide crystals, Zavodsk. Lab., 31: 1095 (1965).
Daw, A. N., and R. N. Mitra, Electroless plating of metals on III–V group semiconductors, Solid-State Electron., 8: 697 (1965).
Duffek, E. F., E. A. Benjamini, and C. Mylroie, Anodic oxidation of silicon in ethyleneglycol solutions, Electrochem. Technol., 3: 75 (1965).
Evans, E. J., Technique for trim etching diffused resistors in silicon, Rev. Sci. Instrum., 36:1248 (1965).
Hobson, M. C., and H. Leidheiser, Increased rate of InSb formation on the surface of antimony under the electrochemical treatment. Trans. Met. Soc. AIME, 233: 482 (1965).
Ivanov, V. G., Preparation of germanium emitters and production of a field emission image of pure germanium, Radiotekhn. i Elektron., 10:576(1965).
Kochegarov, V. M., V. D., Samuilenkova, and G. Ya. Semyachko, Electrochemical deposition of electric contacts on the surface of n- and p-type germanium, Zh. Prikl. Khim., 38:1300 (1965).
Kochegarov, V. M., and L. N. Kolesov, Electrochemical deposition of electric contacts on the surface of p-silicon, Zh. Prikl. Khim., 38:1396 (1965).
Konoplya, L. N., A. F. Kravchenko, and V. P. Sirotkina, Nonrectifying contacts on gallium arsenide, Pribory i Tekhn. Éksperim., 1965(3):243.
Leritsi, A., T. Nemet, P. Sebeni, and E. Tikhani, Device for protecting micrononuniformities in semiconductors, Pribory i Tekhn. Éksperim., 1965(3): 201.
Mackintosh, I. M., P. F. Schmidt, and M. W. Lapkin, Integrators prepared using electrochemical methods, Proc. Inst. Elect. Electron. Engrs., 52:1447 (1964).
McNeill, W., L. L. Gruss, and D. G. Husted, The anodic synthesis of CdS films, J. Electrochem. Soc., 112:713 (1965).
Monnier, R., and P. Tissot, Étude du compartement et de l’electrolyse de solution d’oxide de germanium dans des fluorures fondus. Helv. Chim. Acta, 47:2203 (1964). New method of electropolishing germanium slices, Electrochem. Technol., 4:73 (1966).
Schmidt, P. F., T. W. O’Keeffe, J. Oroshnik, and A. E. Owen, Doped anodic oxide films for device fabrication in silicon (II). Diffusion sources of composition and diffusion results. J. Electrochem. Soc., 112:800 (1965).
Shchigolev, P. V., and Z. B. Safonova, Electropolishing of silicon, Elektrokhimiya, 1:1077 (1965).
Seo, J., Japanese Pat. N2258 (1958); C. A., 53:11067 (1959).
Wolkenberg, A., Electrochimical and photochemical properties of the group IV semiconductors. Phototelectrochemical cell with n-type germanium. Solid-State Electron., 8:581 (1965).
Zesimovich, D. P., and V. D. Nemtsov, Polarization of silicon electrode in electrodeposition of indium and antimony. Ukr. Khim. Zh., 32:20 (1966).
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1967 Springer Science+Business Media New York
About this chapter
Cite this chapter
Myamlin, V.A., Pleskov, Y.V. (1967). Use of Electrochemical Methods for Investigating Properties and Treating the Surface of Semiconductor Materials. In: Electrochemistry of Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-6533-2_6
Download citation
DOI: https://doi.org/10.1007/978-1-4899-6533-2_6
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4899-6248-5
Online ISBN: 978-1-4899-6533-2
eBook Packages: Springer Book Archive