Abstract
Radiative transitions due to the recombination of excitons localized at neutral donor and acceptor impurities were first recognized by Haynes in the low temperature near band-gap lum-inescence of lightly doped silicon.(1) Shortly afterwards, similar transitions were identified in doped germanium(2) and subsequently in many other materials. Both no-phonon and phonon-assisted bound exciton recombinations were seen. The identified phonons are those which conserve momentum (M. C. phonons) in the indirect inter-band transitions, as is shown from a comparison between the intrinsic absorption and lumines- cence spectra. The impurity center remains in its ground electronic state during these transitions. Additional, weaker, impurity-induced luminescence lines were observed in the early work, particularly in germanium by Benoit a la Guillaume and Parodi(2) (hereafter B.P.). The transitions responsible for these bands, which were inadequately explained in the early work, are the subject of the present paper. It will be shown that they all involve recombinations in which the impurity center is left in an excited state.
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References
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From the parity viewpoint, the “two-electron” transitions in silicon are analogous to the electronic Raman scattering of the emitted radiation by neutral impurity centers. (R. J. Elliott, and R. Loudon, Physics Letters 3, 189, 1963). The Raman scattering efficiency is zero in the effective mass approximation unless the initial and final states are derived from the same envelope state of the impurity. This can explain the prominence of the 1s(A1) → 1s(e) transition both in the Raman scattering (Ref. 10) and in the free exciton “two-electron” recombinations (Section IVC). More detailed considerations are evidently necessary to account for the dominance of the 1s → 2s impurity excitation in the bound exciton “two-electron” spectra, however.
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In the calculation of EH- from Eq. (1), Eg was obtained from the low temperature exciton energy gap, EgX, using the relationship Eg = Egx + E. The internal Binding energy of the free exciton, Ex, was taken to be~8 meV (Ref. 13).
Component PO VO is noticeably narrower at 14°K than at 4.2°K. A similar effect has been noted in silicon (Ref. 12). This effect may be due to the increasing relative strength at the lower temperatures of bound-exciton valley-orbit “two-electron” transitions and of the influence of an unresolved splitting in the free exciton transition.
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Dean, P.J., Haynes, J.R., Flood, W.F. (1968). New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and Germanium. In: Wallis, R.F. (eds) Localized Excitations in Solids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-6445-8_27
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DOI: https://doi.org/10.1007/978-1-4899-6445-8_27
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