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Localized Excitations in Solids pp 218–238Cite as

Isoelectronic Impurities in Semiconductors

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Abstract

The term “Isoelectronic Impurity” is used to denote an impurity center in a crystal arising when an atom from the same column of the periodic table as one of the constituents of the host crystal substitutes for that constituent. Isoelectronic substitutions in certain wideband gap semiconductors have a profound effect on the optical properties of the materials for photon energies in the vicinity of the band gap. In particular, the impurity systems GaP:N, GaP:Bi, and ZnTe:0 exhibit sharp absorption lines and CdS:Te exhibits an absorption band lying within the band gaps of the pure crystals.1,2,3,4 These lines can be attributed to exciton bound states at the impurities.

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References

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Author information

Authors and Affiliations

  1. Palmer Physical Laboratory, Princeton University, Princeton, New Jersey, USA

    Roger A. Faulkner

  2. Bell Telephone Laboratories, Murray Hill, New Jersey, USA

    Roger A. Faulkner

  3. Palmer Physical Laboratory, Princeton University, Princeton, New Jersey, USA

    J. J. Hopfield

Authors
  1. Roger A. Faulkner
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  2. J. J. Hopfield
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Editor information

Editors and Affiliations

  1. U.S. Naval Research Laboratory, Washington, D.C., USA

    R. F. Wallis

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© 1968 Springer Science+Business Media New York

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Faulkner, R.A., Hopfield, J.J. (1968). Isoelectronic Impurities in Semiconductors. In: Wallis, R.F. (eds) Localized Excitations in Solids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-6445-8_24

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  • DOI: https://doi.org/10.1007/978-1-4899-6445-8_24

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-6218-8

  • Online ISBN: 978-1-4899-6445-8

  • eBook Packages: Springer Book Archive

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