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Infrared Absorption Studies of Localized Vibrational Modes in Semiconductors

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Localized Excitations in Solids

Abstract

There has been considerable general interest recently in the lattice dynamics of crystals containing defects. The most detailed experimental information concerning the dynamics of imperfect lattices has been obtained by infrared spectroscopic methods. The introduction of point defects into ionic crystals may activate two types of infrared vibrational absorption. (a) Localized mode absorption arising from the vibrations of light impurities. This type of absorption occurs outside the regions of band mode vibration and gives rise to sharp absorption lines. The amplitude of a localized vibrational mode is large near the defect and dies away rapidly with distance from the defect. (b) Resonant mode absorption which may be activated by all impurities. This type of absorption gives rise in general to broader peaks within the region of the band modes of the host crystal. The amplitude of resonance modes is enhanced near the defect but these modes may be transmitted through the lattice and closely resemble unperturbed lattice modes at large distances from the defect. For a recent review of work on local and resonance modes in ionic crystals see; for example, Maradudin.(1)

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Hayes, W. (1968). Infrared Absorption Studies of Localized Vibrational Modes in Semiconductors. In: Wallis, R.F. (eds) Localized Excitations in Solids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-6445-8_15

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  • DOI: https://doi.org/10.1007/978-1-4899-6445-8_15

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-6218-8

  • Online ISBN: 978-1-4899-6445-8

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