Abstract
The resistance of single crystals of bismuth has been measured at 1.2°K along the trigonal axis, while various constant magnetic fields up to about 18 kG were rotated in the plane perpendicular to that axis. The specimens were cut from seeded single crystals, grown from zone-refined bismuth, and the current and voltage leads were soldered to them with low melting-point solder. Specimens with resistance ratios as large as 1000 (in the earth’s magnetic field) have been obtained with this process. The resistance measurements were made by conventional methods, using a potentiometer.
Research supported by the National Research Council of Canada, the Ontario Research Foundation, and the University of Toronto.
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References
J. E. Kunzler, F. S. L. Hsu, and W. S. Boyle, Phys. Rev. 128, 1084, 1962.
L. S. Lerner, Phys. Rev. 130, 605, 1963.
Y. Saito, J. Phys. Soc. Japan 18, 1845, 1963.
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Forrest, A.M., Hollis Hallett, A.C. (1965). Magnetoresistance of Bismuth. In: Daunt, J.G., Edwards, D.O., Milford, F.J., Yaqub, M. (eds) Low Temperature Physics LT9. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-6443-4_14
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DOI: https://doi.org/10.1007/978-1-4899-6443-4_14
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