Abstract
Hydrogenated microcrystalline silicon is a mixed-phase material consisting of submicron size silicon crystallites embedded into an amorphous matrix1. This new phase material has received increased attention because of its potential application in thin film devices2,3. Such material was first prepared by Veprek and his coworkers4–6 by hydrogen-plasma assisted silicon transport. In this method, the silicon charge, kept at relatively low temperatures, reacts with atomic hydrogen and forms volatile hydrides, which are transported and decomposed on a substrate, kept at higher temperatures. More recently hydrogenated microcrystalline silicon has been prepared by high power glow discharge decomposition of silane, diluted in hydrogen7,8 Material produced by these two methods has been investigated by a number of groups and models regarding the kinetics of growth have been proposed5,8. Limited progress has also been made in the deposition of such material by the method of sputtering3,9,10,11. However, the mechanism of thin film growth and crystallization has only been briefly addressed11.
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Moustakas, T.D. (1985). Growth and Crystallization Mechanism of Microcrystalline Silicon Films Produced by Reactive RF Sputtering. In: Adler, D., Fritzsche, H. (eds) Tetrahedrally-Bonded Amorphous Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-5361-2_8
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DOI: https://doi.org/10.1007/978-1-4899-5361-2_8
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