Abstract
Recent results of studies of amorphous Si:H using time resolved photomodulation spectroscopy in the time domain from a fraction of a picosecond to milliseconds are reviewed. Information has been obtained on energy dissipation rates of hot carriers, transport processes associated with carrier trapping in shallow and deep states, recombination at high tempertures involving multiple trapping and at low temperatures by tunneling.
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Tauc, J. (1985). Time Resolved Optical Modulation Spectroscopy of Amorphous Semiconductors. In: Adler, D., Fritzsche, H. (eds) Tetrahedrally-Bonded Amorphous Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-5361-2_28
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DOI: https://doi.org/10.1007/978-1-4899-5361-2_28
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