Abstract
A discussion of salient experimental observations of light induced fatigue of hydrogenated amorphous silicon, Staebler-Wronski(S-W), effect is presented. The aim is to formulate the boundaries within which any model of the effect must lie. At present it is known that the S-W effect involves thermally activated hole and electron trapping in deep traps. The activation energies are in the vicinity of 1eV and 1.5eV for electron and hole, respectively.
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Crandall, R.S. (1985). Staebler-Wronski Effect in Hydrogenated Amorphous Silicon. In: Adler, D., Fritzsche, H. (eds) Tetrahedrally-Bonded Amorphous Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-5361-2_26
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DOI: https://doi.org/10.1007/978-1-4899-5361-2_26
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