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Is the DLTS Density of States for Amorphous Silicon Correct?

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Tetrahedrally-Bonded Amorphous Semiconductors

Part of the book series: Institute for Amorphous Studies Series ((IASS))

Abstract

A large number of different measurements which are sensitive to gap states in hydrogenated amorphous silicon have been analyzed over the past few years in an attempt to determine the generic form of the density of states function within the mobility gap of this material. These results tend to support one or the other of two quite different functions: a) the field-effect density of states, or b) the DLTS density of states. In this paper we review the evidence for the density of states function determined for a-Si:H by deep-level transient spectroscopy (DLTS). We argue that the strong and growing support for the DLTS picture is evidence that the two general forms for the density of states relate to different spatial regions of the specimen, e.g. interface vs. bulk properties.

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Author information

Authors and Affiliations

  1. University of Oregon, Eugene, OR, 97403, USA

    J. D. Cohen

  2. AT&T Bell Laboratories, Murray Hill, NJ, 07974, USA

    D. V. Lang

Authors
  1. J. D. Cohen
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  2. D. V. Lang
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Editor information

Editors and Affiliations

  1. Massachusetts Institute of Technology, Cambridge, Massachusetts, USA

    David Adler

  2. University of Chicago, Chicago, Illinois, USA

    Hellmut Fritzsche

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© 1985 Springer Science+Business Media New York

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Cohen, J.D., Lang, D.V. (1985). Is the DLTS Density of States for Amorphous Silicon Correct?. In: Adler, D., Fritzsche, H. (eds) Tetrahedrally-Bonded Amorphous Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-5361-2_25

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  • DOI: https://doi.org/10.1007/978-1-4899-5361-2_25

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-5363-6

  • Online ISBN: 978-1-4899-5361-2

  • eBook Packages: Springer Book Archive

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