Abstract
While the electronic properties of hydrogenated amorphous silicon have been widely studied both theoretically and experimentally in the last years the electronic properties of the similar material a-Ge:H have received much less attention.This is of course mainly due to the fact that a-Si:H is considered superior to a-Ge:H for all technical applications.The larger band gap of the former material is also helpful to suppress contributions of ambipolar transport at elevated temperatures,a difficulty that is oftenly observed in a-Ge:H.
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Overhof, H. (1985). Density of States Distribution and Transport Properties of a-Ge:H. In: Adler, D., Fritzsche, H. (eds) Tetrahedrally-Bonded Amorphous Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-5361-2_24
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DOI: https://doi.org/10.1007/978-1-4899-5361-2_24
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