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Gap States in Hydrogenated Amorphous Silicon: The Trapped Hole Centres (The a Centres)

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Book cover Tetrahedrally-Bonded Amorphous Semiconductors

Part of the book series: Institute for Amorphous Studies Series ((IASS))

Abstract

We have previously suggested the existence of trapped hole centres, which are designated as the A centres, as radiative recombination centres in hydrogenated amorphous silicon (a-Si:H) from the measurements of optically detected magnetic resonance (ODMR)1−6, photoinduced absorption (PA)7 and photoinduced absorption-detected ESR(PADESR)8’ 9. Furthermore, we have pointed out that the A centres are correlated with the presence of hydrogen in a-Si:H films10. In this article, we review these results and present some additional evidence for the existence of the A centres that has been obtained from the time-resolved (TR) ODMR experiments11’12. We discuss the nature of the A centres on the basis of the results obtained by the ODMR and PA measurements. The correlation between our ODMR and PA experiments and other experiments concerning dual beam photoconductivity and thermally stimulated currents is also discussed.

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Author information

Authors and Affiliations

  1. Institute for Solid State Physics, University of Tokyo , Roppongi, Tokyo 106, Japan

    K. Morigaki, H. Takenaka, I. Hirabayashi & M. Yoshida

Authors
  1. K. Morigaki
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  2. H. Takenaka
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  3. I. Hirabayashi
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  4. M. Yoshida
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Editor information

Editors and Affiliations

  1. Massachusetts Institute of Technology, Cambridge, Massachusetts, USA

    David Adler

  2. University of Chicago, Chicago, Illinois, USA

    Hellmut Fritzsche

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Morigaki, K., Takenaka, H., Hirabayashi, I., Yoshida, M. (1985). Gap States in Hydrogenated Amorphous Silicon: The Trapped Hole Centres (The a Centres). In: Adler, D., Fritzsche, H. (eds) Tetrahedrally-Bonded Amorphous Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-5361-2_19

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  • DOI: https://doi.org/10.1007/978-1-4899-5361-2_19

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-5363-6

  • Online ISBN: 978-1-4899-5361-2

  • eBook Packages: Springer Book Archive

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