Abstract
Atomic coordinations in amorphous semiconductors are reviewed in terms of octet and non-octet bonding. Particular attention is paid to the possibility of three-centre bonding in amorphous boron-silicon and gallium-arsenic alloys, to defects and to the doping mechanism in amorphous silicon.
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Robertson, J. (1985). Bonding in Amorphous Semiconductors; Beyond the 8-N Rule. In: Adler, D., Fritzsche, H. (eds) Tetrahedrally-Bonded Amorphous Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-5361-2_15
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DOI: https://doi.org/10.1007/978-1-4899-5361-2_15
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