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Tetrahedrally-Bonded Amorphous Semiconductors pp 165–175Cite as

The Role of Impurities in Hydrogenated Amorphous Silicon

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Part of the book series: Institute for Amorphous Studies Series ((IASS))

Abstract

It is well known that impurities can strongly affect the properties of crystalline semiconductors. However, early work with amorphous semiconductors showed that these materials were relatively insensitive to impurities. This result was not totally unexpected since amorphous semiconductors were known to possess a large density of localized states. Moreover, most scientists believed that many of the effects of impurities in crystalline semiconductors would be supressed by the amorphous matrix adjusting so as to satisfy the normal valence bonding requirements of the impurity.

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Author information

Authors and Affiliations

  1. Solarex Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA, 18940, USA

    David E. Carlson

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  1. David E. Carlson
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Editor information

Editors and Affiliations

  1. Massachusetts Institute of Technology, Cambridge, Massachusetts, USA

    David Adler

  2. University of Chicago, Chicago, Illinois, USA

    Hellmut Fritzsche

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© 1985 Springer Science+Business Media New York

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Carlson, D.E. (1985). The Role of Impurities in Hydrogenated Amorphous Silicon. In: Adler, D., Fritzsche, H. (eds) Tetrahedrally-Bonded Amorphous Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-5361-2_14

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  • DOI: https://doi.org/10.1007/978-1-4899-5361-2_14

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-5363-6

  • Online ISBN: 978-1-4899-5361-2

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