Abstract
Studies of reactively sputtered a-Ge:H show that the dangling bond density measured by optical absorption and electron spin resonance decreases exponentially with increasing hydrogen partial pressure. The magnitude of steady-state photoconductivity is inversely related to defect density in materials deposited or annealed above 350K, indicating that photoconduction is limited by defect mediated recombination. Materials prepared at lower temperatures are poor photoconductors despite low defect density. A residual mid-gap optical absorption of ~ 10 cm-1 is present which cannot be removed by H2 during growth.
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References
The Physics of Hydrogenated Amorphous Silicon, ed, J. Joanopoulos and G. Lucovsky, (Springer-Verlag, 1984) and references therein.
Hydrogenated Amorphous Silicon I and II, ed. J. Pankove, (Academic Press, 1984) and references therein.
Proceedings of the 10th International Conference on Amorphous and Liquid Semiconductors, ed.
G. A. N. Connell and J. Pawlik, Phys. Rev. B, 13, 787, (1976).
A. J. Lewis, Phys. Rev. B, 14, 658 (1976).
W. B. Jackson, N. M. Amer, T7 C. Boccara and D. Fourner, Appl. Opt. 20, 1333 (1981).
D. Moustakas, G. A. N. Connell and W. Paul, in Electronic Phenomena in Non-Crystalline Solids, ed. B. T. Kolomiets (Acad, of Sciences of the USSR, 1976 ), p. 310.
We define the energy gap Eq by fitting the absorption to a hv = (hv - Eq)2. The mid-gap absorption aMG is the value of a at hv = Eq/2.
P. D. Persans, A. F. Ruppert, G. D. Cody, B. G. Brooks and W. Lanford, AIP Conf. Proc. No. 120, (American Inst, of Physics, 1984 ), p. 349.
P. D. Persans, A. F. Ruppert, S. S. Chan, G. D. Cody, Sol. St. Commun., 54, 203, (1984).
M. Zavetova and V. Vorlicek, phys. stat. sol. (b) 48, 113 (1971).
We find essentially the same results if we characterize defect density by choosing to measure a at single low energy (e.g. - a (0.6 eV)). A third method, plotting (a hv)2 against hv and characterizing defect density by the slope, also yields quantitatively similar conclusions.
W. B. Jackson and N. Amer, Phys. Rev. B, _25_, 5321, (1981).
M. Stutzmann, J. Stuke and H. Dersch, phys. stat. sol. 115, 141 (1983).
T. Tiedje, T. Moustakas, J. Cebulka, Phys. Rev. B _23/ 5634, (1981).
T. D. Moustakas and W. Paul, Phys. Rev. B, 16, 1564, (1977).
D. I. Jones, W. E. Spear, P. G. LeComber, S. Li, R. Martins, Phil. Mag. B, 39, 147 (1979).
R. A. Rudder, J. W. Cook, Jr., and G. Lucovsky, Appl. Phys. Lett. 43, 871, (1983).
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Persans, P.D., Ruppert, A.F., Roxlo, C.B. (1985). Defect Passivation and Photoconduction in Sputtered a-Ge:H. In: Adler, D., Fritzsche, H. (eds) Tetrahedrally-Bonded Amorphous Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-5361-2_12
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DOI: https://doi.org/10.1007/978-1-4899-5361-2_12
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