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Hydrogen Neutralization of Defects in Silicon

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Book cover Tetrahedrally-Bonded Amorphous Semiconductors

Part of the book series: Institute for Amorphous Studies Series ((IASS))

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Abstract

Considerable attention has been given to hydrogenated amorphous silicon, a-Si:H. The insight derived from the studies of amorphous materials can be applied to the better known crystalline form of Si with interesting consequences.

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© 1985 Springer Science+Business Media New York

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Pankove, J.I. (1985). Hydrogen Neutralization of Defects in Silicon. In: Adler, D., Fritzsche, H. (eds) Tetrahedrally-Bonded Amorphous Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-5361-2_10

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  • DOI: https://doi.org/10.1007/978-1-4899-5361-2_10

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-5363-6

  • Online ISBN: 978-1-4899-5361-2

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