Abstract
Progressive decrease of the size of mesoscopic devices enables us to enter the area of quantum confined electron systems in which the system extensions are comparable to the Fermi-wavelength. It is intriguing to investigate how spatial confinement influences system properties when the system size drops from macroscopic dimensions (W ≫ λF) to extents comparable to the Fermi wavelength (W ≃ λF). In such systems not only phase coherence phenomena but also confinement induced quantization of the conduction band energies into subbands or discrete levels start to influence system properties. Such devices are preferentially realized on semiconductors because of the relatively large Fermi wavelengths and small effective masses in these materials. Presently, the fabrication of mesoscopic devices in semiconductors starts in most cases from the two-dimensional (2 D) electron system in metal-oxide-semiconductor (MOS) structures or epitaxially grown heterojunctions [1], In these systems the electrons are strongly bound at the interface so that the system is quantum confined in the direction normal to the interface. Free motion is possible only in the remaining lateral dimensions. Most advantageous is that very high mobilities are achievable (up to 107cm2/Vs in present GaAs heterojunctions), correspondingly the elastic mean free path can be as high as several microns, and the carrier density can be tuned over a wide range (up to several 1012cm-2 in Si-MOS structures). The lateral confinement of the 2 D electron system to quasi one-dimensional (ID) wires or quasi zero-dimensional (0 D) electron dots is provided by micro-structuring processes that pattern the device surface [2].
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References
T. Ando, A.B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982)
“Proc. of the 33rd International Symposium on Electron, Ion and Photon Beams”, Monterey 1989, published in J. Vac. Sci. Technol. B 7, 1373 (1989)
T.N. Theis, Surf. Sci. 98, 515 (1980)
L. Zheng, W.L. Schaich, and A.H. MacDonald, Phys. Rev. B 41, 8493 (1990)
E. Batke, D. Heitmann, and C.W. Tu, Phys. Rev. B 34, 6951 (1986)
M. Tewordt, E. Batke, J.P. Kotthaus, G. Weimann, and W. Schlapp, in: “High Magnetic Fields in Semiconductor Physics II”, G. Landwehr, ed., Springer Series in Sol. St. Sc. 87, 297, Springer Verlag, Berlin (1988)
A.C. Warren, D.A. Antoniadis, and H.I. Smith, Phys. Rev. Lett. 56, 1858 (1986)
J. Alsmeier, E. Batke, and J.P. Kotthaus, Phys. Rev. B 40, 12574 (1989)
J. Alsmeier, E. Batke, and J. P. Kotthaus, Phys. Rev. B 41, 1699 (1990)
W. Hansen, M. Horst, J.P. Kotthaus, U. Merkt, Ch. Sikorski, and K. Ploog, Phys. Rev. Lett. 58, 2586 (1987)
A.V. Chaplik and D. Heitmann, J. Phys. C 18, 3357 (1985)
W. Kohn, Phys. Rev. 123, 1242 (1961)
W. Hansen, in: Festkörperprobleme, Advances in Sol. St. Phys. 28, U. Rössler, ed., 121, Vieweg, Braunschweig (1988)
U. Mackens, D. Heitmann, L. Prager, J. P. Kotthaus, and W. Beinvogl, Phys. Rev. Lett. 53, 1485 (1984)
M.V. Krasheninnikov and A.V. Chaplik, Fiz. Tekh. Poluprovodn. 15, 32 (1981) [Sov. Phys. Semicond. 15, 19 (1981)]
G. Eliasson, J.-W. Wu, P. Hawrylak, and J.J. Quinn, Sol. St. Commun. 60, 41 (1986)
V. Cataudella and V.M. Ramaglia, Phys. Rev. B 38, 1828 (1988)
C. Dahl, Phys. Rev. B 41, 5763 (1990)
U. Wulf, E. Zeeb, P. Gies, R.R. Gerhardts, and W. Hanke, preprint
V. Cataudella, Phys. Rev. B 38, 7828 (1988)
W. Que and G. Kirczenow, Phys. Rev. B 37, 7153 (1988)
W. Que and G. Kirczenow, Phys. Rev. B 39, 5998 (1989)
A. V. Chaplik, Superlattices and Microstructures 6, 329 (1989)
V. Shikin, T. Demel, and D. Heitmann, Surf. Sc. 229, 276 (1990)
Q. Li and S. DasSarma, Phys. Rev. B 40, 5860 (1989)
D.B. Mast, A.J. Dahm, and A. L. Fetter, Phys. Rev. Lett. 54, 1706 (1985)
D.C. Glattli, E.Y. Andrei, G. Deville, J. Poitrenaud, and F.I.B. Williams, Phys. Rev. 54, 1710 (1985)
S.J. Allen, F. DeRosa, G.J. Dolan, and C.W. Tu, in Proc. of the 17th Int. Conf. Physics of Semiconductors, J.D. Chadi and W.A. Harrison, eds., 313, Springer, New York (1985)
S.J. Allen, Jr. ,H.L. Stornier, and J.C. M. Hwang, Phys. Rev. B 28, 4875 (1983)
T. Demel, D. Heitmann, P. Grambow, and K. Ploog, Phys. Rev. B 38, 12732 (1988)
F. Brinkop, W. Hansen, J.P. Kotthaus, and K. Ploog, Phys. Rev. B 37, 6547 (1988)
K.-F. Berggren, T.J. Thornton, D.J. Newson, and M. Pepper, Phys. Rev. Lett. 57, 1769 (1986)
J. Alsmeier, Ch. Sikorski, and U. Merkt, Phys. Rev. B 37, 4314 (1988)
T. Demel, D. Heitmann, P. Grambow, and K. Ploog, Superlattices and Microstructures 5, 287 (1989)
U. Merkt, Superlattices and Microstructures 6, 341 (1989)
U. Merkt, Ch. Sikorski, and J. Alsmeier, in: “Spectroscopy of Semiconductor Microstructures”, G. Fasol, A. Fasolino, and P. Lugli, eds., 89, Plenum Press, New York (1989)
L. Brey, N.F. Johnson, and B.I. Halperin, Phys. Rev. B 40, 10647 (1989)
K.Y. Lee, T.P. Smith, III, H. Arnot, CM. Knoedler, J.M. Hong, D.P. Kern, and S.E. Laux, J. Vac. Sci. Technol. B 6, 1856 (1988)
A. Lorke, J.P. Kotthaus, and K. Ploog, Phys. Rev. Lett. 64, 2559 (1990)
B.A. Wilson, S.J. Allen, Jr., and D.S. Tsui, Phys. Rev. B 24, 5887 (1981)
A.L. Fetter, Phys. Rev. B 32, 7676 (1986)
S.A. Govorkov, M.I. Reznikov, A.P. Senichkin, and V.l. Talyanskii, Pisma Zh. Eksp. Teor. Fiz. 44, 380 (1986) [JETP Lett. 44, 487 (1986)]
V.l. Talyanskii, M. Wassermeier, A. Wixforth, J. Oshinowo, J.P. Kotthaus, I.E. Ba-tov, H. Nickel, and W. Schlapp, Surf. Sc. 229, 40 (1990)
Ch. Sikorski and U. Merkt, Phys. Rev. Lett. 62, 2164 (1989)
T.P. Smith, B.B. Goldberg, P.J. Stiles, and M. Heiblum, Phys. Rev. B 32, 2696 (1985)
T.P. Smith, III, W.I. Wang, and P.J. Stiles, Phys. Rev. B 34, 2995 (1986)
D. Weiss and K. v. Klitzing, in: “High Magnetic Fields in Semiconductor Physics”, G. Landwehr, ed., Springer Series in Sol. St. Sc, 71, 57, Springer, Heidelberg (1987)
S.E. Laux, D.J. Frank, and F. Stern, Surf. Sc. 196, 101 (1988)
T.P. Smith, III, H. Arnot, J.M. Hong, C.M. Knoedler, S.E. Laux, and H. Schmid, Phys. Rev. Lett. 59, 2802 (1987)
T.P. Smith, III, K.Y. Lee, C.M. Knoedler, J.M. Hong, and D.P. Kern, Phys. Rev. B 38, 2172 (1988)
W. Hansen, T.P. Smith,III, K.Y. Lee, J.A. Brum, C.M. Knoedler, J.M. Hong, and D.P. Kern, Phys. Rev. Lett. 62, 2168 (1989)
A. Kumar, S.E. Laux, and F. Stern, preprint (1990)
R. II. Silsbee and R.C. Ashoori, Phys. Rev. Lett. 64, 1991 (1990)
V. Fock, Z. Phys. 47, 446 (1928)
G.W. Bryant, Phys. Rev. Lett. 59, 1140 (1987)
P.A. Maksym and T. Chakraborty, Phys. Rev. Lett. 65, 108 (1990)
for a review, see T. Chakraborty and P. Pietilinen, “The Fractional Quantum Hall Effect”, Springer Series in Sol. St. Sc. 85, Springer, New York, (1988)
T.P. Smith, III, K.Y. Lee, J.M. Hong, C.M. Knoedler, C.H. Arnot, and D.P. Kern, Phys. Rev. B 38, 1558 (1988)
W. Hansen, T.P. Smith, III, K.Y. Lee, J.M. Hong, and CM. Knoedler, Appl. Phys. Lett. 56, 168 (1990)
M.A. Reed, J.N. Randall, R.J. Aggarwal, R.J. Matyi, T.M. Moore, and A.E. Wetsel, Phys. Rev. Lett. 60, 535 (1988)
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Hansen, W. (1991). Spectroscopy on Laterally Confined Electron Systems. In: Kramer, B. (eds) Quantum Coherence in Mesoscopic Systems. NATO ASI Series, vol 254. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3698-1_2
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