Abstract
We show that electronic Raman scattering measurements of the plasmon dispersion, in combination with calculations of the RPA dielectric response and self-consistent electronic subband calculations, can be used to determine the subband structure and populations of modulation-doped GaAs/AlxGa1-xAs heterostructures. Thus we present a contactless optical alternative to measurements of Shubnikov-de Haas oscillations for the determination of carrier concentrations. We give an introduction to the computation of plasmons in quantum well systems and illustrate this for the case of a single modulation-doped quantum well, for which we predict the presence of a Fano-type resonance for plasmons in regions of Landau damping. From a Raman determination of the plasmon dispersion we obtain the subband carrier densities and wave functions of multi-quantum wells with multiple subband occupancy. The same technique can be also be applied for the characterisation of parallel conduction from doped AlGaAs layers in modulation-doped heterostructures. We report the Raman observation of the plasmon mode in a single heterojunction, with a δ-layer of acceptors in the GaAs buffer a well-defined distance from the interface. Under illumination above the band-gap of the AlGaAs barrier, a dynamic charge-transfer effect occurs in which the quasi-two-dimensional electron concentration of the heterojunction decreases. We use Raman measurements of the plasmon mode to directly determine the change in carrier concentration with excess illumination.
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Richards, D., Fasol, G., Ekenberg, U., Ploog, K. (1991). Electronic Raman Scattering from Modulation-Doped Quantum Wells. In: Lockwood, D.J., Young, J.F. (eds) Light Scattering in Semiconductor Structures and Superlattices. NATO ASI Series, vol 273. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3695-0_39
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DOI: https://doi.org/10.1007/978-1-4899-3695-0_39
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