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Electronic Properties of Parabolic Quantum Wells

  • Chapter
Book cover Light Scattering in Semiconductor Structures and Superlattices

Part of the book series: NATO ASI Series ((NSSB,volume 273))

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Abstract

The interacting three-dimensional electron gas in a uniform positive background has been widely studied1 as a model for the electrons in metals and doped semiconductors. Some of the properties predicted by the model for low-density systems,2–4 however, have not been observed experimentally. One reason may be that, in the n-doped semiconductors that have been used to achieve low densities, the electrons interact strongly with the charged impurities that are inevitably present.5

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Authors and Affiliations

  1. Lyman Laboratory of Physics, Harvard University, Cambridge, Massachusetts, 02138, USA

    L. Brey, N. F. Johnson, Jed Dempsey & B. I. Halperin

Authors
  1. L. Brey
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  2. N. F. Johnson
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  3. Jed Dempsey
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  4. B. I. Halperin
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Editor information

Editors and Affiliations

  1. National Research Council, Ottawa, Ontario, Canada

    David J. Lockwood

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© 1991 Springer Science+Business Media New York

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Brey, L., Johnson, N.F., Dempsey, J., Halperin, B.I. (1991). Electronic Properties of Parabolic Quantum Wells. In: Lockwood, D.J., Young, J.F. (eds) Light Scattering in Semiconductor Structures and Superlattices. NATO ASI Series, vol 273. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3695-0_38

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  • DOI: https://doi.org/10.1007/978-1-4899-3695-0_38

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-3697-4

  • Online ISBN: 978-1-4899-3695-0

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