Abstract
The experimental techniques of Raman spectroscopy and far-infrared (FIR) Fourier-transform spectroscopy have been applied to a range of semiconductor superlattice specimens. Both resonant and non-resonant Raman scattering are available, and the Fourier-transform techniques include normal-incidence dispersive Fourier-transform spectroscopy (DFTS), attenuated total-reflection (ATR) spectroscopy, and oblique-incidence power Fourier-transform spectroscopy (FTS).
We first present results on undoped long-period GaAs/AlxGa1-xAs specimens that can be understood by means of a simple effective-medium theory. A combination of Raman and FIR data on undoped short-period GaAs/AlAs specimens yields detailed information on positions and dipole strengths of confined optic phonons. Finally we report results on free-carrier-related response, obtained on a GaAs superlattice δ-doped with Si layers, and it is shown that the spectra are sensitive to the spatial distribution of carriers within the specimen.
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Dumelow, T. et al. (1991). Far-Infrared and Raman Studies of Semiconductor Superlattices. In: Lockwood, D.J., Young, J.F. (eds) Light Scattering in Semiconductor Structures and Superlattices. NATO ASI Series, vol 273. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3695-0_33
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DOI: https://doi.org/10.1007/978-1-4899-3695-0_33
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