Abstract
The ability of the Raman scattering technique to coherently probe specific excitation modes of a semiconductor, providing both spectral and thermodynamic information, makes it a powerful tool for time-resolving relaxation processes. Its coherent nature means that the temporal resolution obtained when a short, “probe” pulse is used to Raman scatter from a non-equilibrium system induced by a relatively strong “pump” pulse applied some time t in the past, is limited only to the pulse duration. This is achieved without having to employ any ultrafast electronic, electro-optic, or non-linear mixing techniques which are required in time-resolved photoluminescence experiments. By relating the ratio of Stokes and anti-Stokes scattering strengths obtained from the probe pulses to the occupation number of the corresponding mode, it is possible to directly monitor the buildup and decay of non-equilibrium populations generated either directly or indirectly by the absorption of the pump pulse.
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References
C.L. Collins and P.Y. Yu, Phys. Rev. B 30, 4501 (1984).
D. von der Linde, J. Kühl and H. Klingenber, Phys. Rev. Lett. 44, 1505 (1980).
J.A. Kash, J.C. Tsang, and J.M. Hvam, Phys. Rev. Lett. 54, 2151 (1985).
J.A. Kash, S.S. Jha, and J.C. Tsang, Phys. Rev. Lett. 58, 1869 (1987).
J.F. Young, and K. Wan, Phys. Rev. B 35, 2544 (1987).
J.F. Young, K. Wan, A.J. SpringThorpe, and P. Mandeville, Phys. Rev. B 36, 1316 (1987).
K.T. Tsen and H. Morkoc, Phys. Rev. B 34, 4412 (1986).
D.Y. Oberli, D.R. Wake, M.V. Klein, J. Klem, T. Henderson, and H. Morkoc, Phys. Rev. Lett. 59, 696 (1987).
D. Kim and P.Y. Yu, Phys. Rev. Lett. 64, 946 (1990).
M.C. Tatham, J.F. Ryan, and C.T. Foxon, Sol. State Elec. 32, 1497 (1989).
J.F. Young, K. Wan, and H.M. van Driel, Sol. State Elec. 31, 455 (1988).
A. Othonos, H.M. van Driel, J.F. Young, and P.J. Kelly, Phys. Rev. B 43, 6682 (1991).
S.S. Iyer, G.L. Patton, J.M.C. Stork, B.S. Meyerson, and D.L. Harame, IEEE Trans. Electron Devices 36, 2403 (1989).
H.M. van Driel, Phys. Rev. B 35, 8166 (1987).
E. Conwell, “High Field Transport in Semiconductors”, Solid State Physics Suppl. 9, Academic, New York (1967).
L. Reggiani in: “Proceedings on the 15th International Conference on the Physics of Semiconductors”, J. Phys. Soc. Jpn. Suppl. A 49, 317 (1980).
R. Brunetti, C. Jacoboni, F. Nava, L. Reggiani, G. Bosman, and R.J. Zijlstra, J. Appl. Phys. 52, 6713 (1981).
J.F. Young, P.J. Kelly, and N.L. Henry, Phys. Rev. B 36, 4535 (1987).
A. Elci, M.O. Scully, A.L. Smirl, and J.C. Matter, Phys. Rev. B 16, 191 (1977).
M. Neuberger, “Group IV Semiconducting Materials”, Handbook of electronic materials Vol. 5, Plenum, New York, (1971).
Landolt-Borstein, “Numerical Data and Functional Relationships in Science and Technology”, Vol. 17, O. Madelung, M. Schulz, and H. Weiss eds., Springer-Verlag, Berlin, (1982).
This value was chosen for comparison because of the suggestion in Ref. 15 that the ratio of hole and electron squared deformation potentials in Ge might be ~ 10.
D.J. Lockwood, M.W.C. Dharma-wardana, D.C. Houghton, and J.M. Baribeau, Phys. Rev. B 35, 2243 (1987).
W.J. Brya, Sol. State Comm. 12, 253 (1973).
J.B. Renucci, M.A. Renucci, and M. Cardona, Sol. State Comm. 9, 1651 (1971).
M.I. Alonso and K. Winer, Phys. Rev. B 39, 10056 (1989).
P. Parayanthal and F.H. Pollak, Phys. Rev. Lett. 52, 1822 (1984).
R.A. Cowley, J. Phys. 26, 659 (1976).
D.W. Taylor in: “Optical Properties of Mixed Crystals”, R.J. Elliott and I.P. Ipatova, eds., Elsevier, Amsterdam (1988), Chapter 2.
B.A. Weinstein, Sol. State Comm. 20, 999 (1976).
J. Menéndez and M. Cardona, Phys. Rev. B 29, 2051 (1984).
G. Nilsson and G. Nelin, Phys. Rev. B 3, 364 (1971).
A.H. MacDonald, S.H. Vosko, and P.T. Coleridge, J. Phys. C, 12, 2991 (1979).
D.N. Talwar and K.S. Suh, Phys. Rev. B 36, 6045 (1987).
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Young, J.F., Lockwood, D.J., Baribeau, J.M., Kelly, P.J., Othonos, A., van Driel, H.M. (1991). Non-Equilibrium Phonon Dynamics in Ge and GeSi Alloys. In: Lockwood, D.J., Young, J.F. (eds) Light Scattering in Semiconductor Structures and Superlattices. NATO ASI Series, vol 273. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3695-0_29
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