Abstract
Raman spectroscopy has found widespread use for the investigation of intrinsic phonon modes and electronic excitations of free carriers in bulk semiconductors as well as in semiconductor heterostructures 1-3. Raman scattering by impurities and defects 4,5, in contrast, has been used so far only in a limited number of examples. This also contrasts to other techniques, such as photoluminescence and absorption spectroscopy, which are used routinely for the investigation of defects and impurities.
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Wagner, J. (1991). Raman Spectroscopy of Dopant Impurities and Defects in GaAs Layers. In: Lockwood, D.J., Young, J.F. (eds) Light Scattering in Semiconductor Structures and Superlattices. NATO ASI Series, vol 273. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3695-0_20
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DOI: https://doi.org/10.1007/978-1-4899-3695-0_20
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