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Raman Scattering Characterization of Strain in (001) and (111) GaSb/AlSb Single Quantum Wells and Superlattices and in Metastable GexSn1-x Alloys

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Light Scattering in Semiconductor Structures and Superlattices

Part of the book series: NATO ASI Series ((NSSB,volume 273))

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Abstract

There is growing interest in strained-layer structures which employ metastable alloys itabilized by coherent epitaxy or involve growth orientations other than (100) for which novel )iezoelectric effects are possible. In order to realize the full potential of these structures it is lecessary to characterize the strain retained following growth. Although there are several echniques commonly utilized for this purpose, not all are appropriate for very thin layers iesigned to employ a single quantum well. Raman scattering measurements of optical phonon shifts provide a very basic tool for such characterization, and data can often be collected even n the very thin film limit.

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Schwartz, G.P. (1991). Raman Scattering Characterization of Strain in (001) and (111) GaSb/AlSb Single Quantum Wells and Superlattices and in Metastable GexSn1-x Alloys. In: Lockwood, D.J., Young, J.F. (eds) Light Scattering in Semiconductor Structures and Superlattices. NATO ASI Series, vol 273. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3695-0_15

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  • DOI: https://doi.org/10.1007/978-1-4899-3695-0_15

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-3697-4

  • Online ISBN: 978-1-4899-3695-0

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