Abstract
The question of the appropriate form and validity of the effective-mass approximation when applied to semiconductor heterostructures is adressed. The position dependence of the effective mass m(r) raises the question of the appropriate form of the kinetic operator, and in strained heterostructures the possible spatial variation of the lattice constant a(r) introduces further complications.
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References
Einevoll, G. T., 1990, Phys. Rev. B, 42:3497.
Einevoll, G. T., Hemmer, P. C., and Thomsen, I., 1990, Phys. Rev. B, 42:3485.
Morrow, R. A., 1987, Phys. Rev. B, 35: 8074.
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© 1991 Springer Science+Business Media New York
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Einevoll, G.T., Hemmer, P.C. (1991). Effective-Mass Boundary Conditions for Strained Heterostructures. In: Ferry, D.K., Barker, J.R., Jacoboni, C. (eds) Granular Nanoelectronics. NATO ASI Series, vol 251. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3689-9_33
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DOI: https://doi.org/10.1007/978-1-4899-3689-9_33
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