Abstract
In this paper, we report a feasible experimental approach to high injection effects in semiconductor light sources. We show that by measuring the junction voltage, the differential lifetime, and the relative optical output power as a function of injection current, the chemical potential and the spontaneous recombination rate can be determined as a function of injected charge carrier density. Moreover, we are able to separate the density-dependence of the radiative and nonradiative spontaneous recombination rates. The dependence of the chemical potential on carrier density reflects the presence of band-gap narrowing. The outcome of this investigation is important for the modeling of laser parameters such as threshold current and lasing wavelength which are directly related to the recombination behaviour and the band-gap renormalization (BGR) in QWs.
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© 1991 Springer Science+Business Media New York
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Kirstaedter, N., Böttcher, E.H., Bimberg, D., Harder, C., Meier, H.P. (1991). High Injection Effects in GaAs/AlGaAs Quantum Wells: Spontaneous Recombination and Band-Gap Renormalization. In: Ferry, D.K., Barker, J.R., Jacoboni, C. (eds) Granular Nanoelectronics. NATO ASI Series, vol 251. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3689-9_32
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DOI: https://doi.org/10.1007/978-1-4899-3689-9_32
Publisher Name: Springer, Boston, MA
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