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Introduction to Quantum Transport in Electron Waveguides

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Granular Nanoelectronics

Part of the book series: NATO ASI Series ((NSSB,volume 251))

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Abstract

A number of exciting low-dimensional semiconductor devices and structures have been fabricated recently where the key feature is the confinement of the conducting electrons to narrow channels which have dimensions comparable to or smaller than the inelastic coherence length at an appropriate temperature. The most interesting devices possess some feature sizes commensurate with the de Broglie wavelength. Examples of such structures include quantum wires, ring structures and split-gate squeezed channel devices. To a certain extent these structures may be pictured as electron waveguides. Originally of interest for the construction of electron interferometer devices, a number of phenomena have been discovered in electron waveguides which bring out more of the classical picture of the electron than had been originally appreciated: particulary focussing effects and the cycloidal motion peculiar to magnetic edge states. As we shall see in this chapter even the phenomenon of conductance quantization in quantum point contacts depends more on the quantization of the carrier supply function than on an intrinsic quantum transport process. This paradox may be understood on the basis of rigorous quantum transport theory. Although practical devices are much further from development than had been hoped for in the mid-nineteen eighties, electron waveguide structures offer one route to the study and possible application of granular electronics. Indeed they provide an environment for exposing some outstanding difficulties with manipulating devices containing very few carriers.

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References

  • Barker, J. R., 1982, in “Handbook of Semiconductors,” Vol. 1, W. Paul, ed., North-Holland, New York, 617.

    Google Scholar 

  • Barker, J. R., 1989a, in “Physics and Fabrication of Nanostructures,” M.A. Reed and W.P Kirk, ed., Academic Press, New York, 253.

    Google Scholar 

  • Barker, J. R., 1989b, in “Symposium on New Phenomena in Mesoscopic Structures, Keauhou-Kona, Hawaii”, unpublished.

    Google Scholar 

  • Barker, J. R., 1989c, in “Semiconductor Device Modelling,” C.M. Snowden, ed., Springer-Verlag, London, 207–226.

    Chapter  Google Scholar 

  • Barker, J. R., and Laughton, M., 1990, to be published.

    Google Scholar 

  • Barker, J. R., and Pepin, J., 1990, to be published.

    Google Scholar 

  • Barker, J. R., Pepin, J., Finch, M., and Laughton, M., 1989, Solid State Electron., 32:1155.

    Article  ADS  Google Scholar 

  • Büttiker, M., 1986, Phys. Rev. Lett., 57:1761.

    Article  ADS  Google Scholar 

  • Carruthers, P., and Zachariason, F., 1983, Rev. Mod. Phys., 55:245.

    Article  ADS  Google Scholar 

  • Davies, J. H., and Nixon, J. A., 1989, Phys.Rev. B, 39:3423.

    Article  ADS  Google Scholar 

  • Delsing, P., Likhaerev, K.K., Kuzmin, L. S., Claeson, T., 1989b, Phys. Rev.Lett., 63:1861.

    Google Scholar 

  • Finch, M., 1989, PhD Thesis, University of Glasgow, unpublished.

    Google Scholar 

  • Ford, C. J. B, Thornton, T. J., Newbury, R., Pepper, M., Ahmed, H., Foxon, C. T., Harris, J. J., and Roberts, C., 1988, J. Phys. C., 21:L325.

    Article  ADS  Google Scholar 

  • Frohne, R., and Datta, S., 1988, J. Appl. Phys., 64:4086.

    Article  ADS  Google Scholar 

  • Geerligs, L. J., Anderegg, V. F., Holweg, P. A. M., Mooij, J. E., Pothier, H., Esteve, D., Urbina, C., and Devoret, M. H., 1990, Phys. Rev. Lett., 64:2691.

    Article  ADS  Google Scholar 

  • Gefen, Y., Imry, Y., and Azbel, M.Ya., 1984, Phys. Rev. Lett., 52:129.

    Article  ADS  Google Scholar 

  • Kirczenow, G., 1988, Phys. Rev B, 38:10958.

    Article  ADS  Google Scholar 

  • Kumar, A., Laux, S., and Stern, F., 1989, Channel sensitivity to gate roughness in a splitgate GaAs-AlGaAs heterostructure, to be published.

    Google Scholar 

  • Landauer, R., 1970, Phil.Mag., 21:863.

    Article  ADS  Google Scholar 

  • Laughton, M., Barker, J. R., Nixon, J. A., and Davies, J. H., 1990, submitted for publication.

    Google Scholar 

  • Laux, S., and Stern, F., 1986, Appl.Phys.Lett., 49:91.

    Article  ADS  Google Scholar 

  • Lent, C., Sivaprakasam, and Kikner, D. J., 1989, in “Physics and Fabrication of Nanostructures,” M. A. Reed and W. P. Kirk, ed., Academic Press, New York, 279.

    Google Scholar 

  • Likhaerev, K. K., 1988, IBM J. Res. Develop., 32:144.

    Article  Google Scholar 

  • Likhaerev, K. K., Bakhvalov, N. S., Kazacha, G.S., and Serdyukpva, S. I., 1989a, IEEE Trans. Magn., 25:1436.

    Article  ADS  Google Scholar 

  • Nixon, J. A., and Davies, J. H., 1990, to be published.

    Google Scholar 

  • Nixon, J. A., Davies, J. H., and Barker, J. R., 1989, in “Physics and Fabrication of Nanostructures,” M. A. Reed and W. P. Kirk, ed., Academic Press, New York, 123.

    Google Scholar 

  • Nixon, J. A., Davies, J. H., and Baranger, H., 1990, unpublished.

    Google Scholar 

  • Payne, M. C., 1989, J. Phys. Condens.Matt., 1:4939.

    Article  ADS  Google Scholar 

  • Pepin, J., 1990, PhD Thesis, University of Glasgow, unpublished.

    Google Scholar 

  • Skocpol, W., 1986, in “Physics and Fabrication of Microstructures and Microdevices,” M.J. Kelly, ed., Springer-Verlag, London, 255.

    Chapter  Google Scholar 

  • Sporleder, F., and Unger, H. G., 1979, “Waveguide Tapers Transitions and Couplers,” Peter Peregrinus Ltd., IEE, London.

    Google Scholar 

  • Stone, A. D., and Szafer, A., 1988, IBM J. Res.Dev., 32:384.

    Article  Google Scholar 

  • van Houten, H., Beenakker, C. J. W., and van Wees, B. J., 1990, Quantum Point Contacts, in Semiconductors and Semi-metals, M. A. Reed, ed., Academic Press, New York.

    Google Scholar 

  • Wharam, D. A., Thornton, T. J., Newbury, R., Pepper, M., Ahmed, H., Frost, J. E. F., Hasko, D.G., Peacock, D.C., Ritchie, D. A., and Jones, G. A. C., 1988, J. Phys. C, 21:L209.

    Article  ADS  Google Scholar 

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© 1991 Springer Science+Business Media New York

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Barker, J.R. (1991). Introduction to Quantum Transport in Electron Waveguides. In: Ferry, D.K., Barker, J.R., Jacoboni, C. (eds) Granular Nanoelectronics. NATO ASI Series, vol 251. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3689-9_2

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  • DOI: https://doi.org/10.1007/978-1-4899-3689-9_2

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-3691-2

  • Online ISBN: 978-1-4899-3689-9

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