Abstract
When a semiconductor device becomes so small that the electron wavefunction preserves its phase information within the structure, electron waves which pass through different paths would interfere with each other and the quantum interference would play an important role in electron transport. This quantum interference effect of electron waves has been of great interest in solid state physics (Umbach et al., 1984; Shervin et al., 1981; Webb et al., 1985; Al’tshuler, 1985; Lee et al., 1985). Recently, electron devices that utilize quantum interference were proposed (Datta et al., 1986, 1988; Yamamoto et al., 1988) and their advantages, such as high speed, low power dissipation, and multifunctionality, were discussed. Since then, quantum interference has attracted much attention from the technological point of view as well.
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Ikoma, T., Hiramoto, T. (1991). Weak Localization and Phase Breaking Mechanisms of Electron Waves in Quasi One-Dimensional Wires. In: Ferry, D.K., Barker, J.R., Jacoboni, C. (eds) Granular Nanoelectronics. NATO ASI Series, vol 251. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3689-9_16
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