Abstract
Migration of helium in gold was investigated by electrical resistivity measurements after implantation at 5 K with energies below the threshold for defect production. Annealing experiments indicated mobility of interstitial helium in Au already at 5 K. After room temperature implantation, diffusion coefficients of substitutional helium in Cu, Ag and Au were determined by thermal helium desorption spectroscopy during and after implantation. By comparison to self diffusion data and to experimental dissociation energies the operating diffusion mechanisms were determined. These are the vacancy mechanism in gold and probably also in silver, and the dissociative mechanism in copper. At temperatures below 673 K and 775 K, helium diffusion in gold and silver is promoted by implantation induced vacancies. Retention of helium by clustering was quantitatively analyzed in terms of stability of small helium clusters.
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Jung, P. (1991). Diffusion and Clustering of Helium in Noble Metals. In: Donnelly, S.E., Evans, J.H. (eds) Fundamental Aspects of Inert Gases in Solids. NATO ASI Series, vol 279. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3680-6_5
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DOI: https://doi.org/10.1007/978-1-4899-3680-6_5
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