Abstract
The punching of dislocation loops by overpressurized inert gas bubbles has long been regarded as the dominant mechanism for bubble growth under implantation at low homologous temperatures. The present work examines the predictions of the loop-punching theory in some detail and presents experimental evidence to show that loop-punching does not appear to operate for Kr and Xe in Al, Cu and Ni. Two alternative models of athermal bubble growth are discussed.
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Donnelly, S.E., Mitchell, D.R.G., van Veen, A. (1991). Loop-Punching as a Mechanism for Inert Gas Bubble Growth in Ion-Implanted Metals. In: Donnelly, S.E., Evans, J.H. (eds) Fundamental Aspects of Inert Gases in Solids. NATO ASI Series, vol 279. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3680-6_32
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DOI: https://doi.org/10.1007/978-1-4899-3680-6_32
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