Abstract
During the last years, there has been a fast increase in the complexity of optical and optoelectronic devices. Their fabrication makes use of special growth techniques which need more understanding of the basic processes occuring during the growth. The specific features of those techniques will result in new devices bat they are also very useful to simplify the fabrication schemes of existing devices. One of those techniques is selective epitaxial growth where the substrate is partly masked in order to obtain only monocrystalline deposition in the windows opened in the mask. Nonplanar epitaxial growth makes use of patterned substrates. Mesas, channels or more complex structures are etched in the substrate through a mask which is removed after etching. The combination of both techniques will result in selective nonplanar growth. This is obtained by growing on a substrate where the mask is leaved, after patterning.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Azoulay R., Bouadma N., Bouley J.C., Dugrand L.; J.Cryst.Growth, 55(1981), p 229
Demeester P., Van Daele P., Ackaert A., Baets R.; Gallium Arsenide and Related Compounds, Inst.Phys.Conf.Ser.No. 91 (1987), p 183
Demeester P., Van Daele P., Baets R.; J.Appl.Phys., 63(1988), p 2284
Duchemin J.P., Bonnet M., Koelsch F., Huyghe D.; J.Cryst. Growth, 45(1978), p 181
Favenneo P.N., Salvi M., DiForte Poisson M.A., Duchemin J.P.; Appl.Phys. Lett., 43(1983), p 771
Fekete D., Burnham R.D., Scifres D.R., Streifer W., Yingling R.D.; Appl. Phys.Lett., 38(1981), p 607
Fekete D., Bour D., Ballantyne J.M., Eastman L.F.; Appl.Phys.Lett., 50(1987), p 635
Ghosh C, Layman R.L.; Appl. Phys.Lett., 45(1984), p 1229
Giling L.J., Van Enckevort W.J.P.; Surf.Sc., 161(1985), p 567
Heinecke H., Brauers A., Grafahrend F., Plass C., Putz N., Werner K., Weyers M., Luth H., Balk P., J.Cryst. Growth, 77(1986), p 303
Hersee S.D., Barbier E., Blondeau R.; J.Cryst. Growth, 77(1986), p 310
Hong C, Kasamset D., Kim M., Milano R.A.; Elect.Lett., 19(1983), pp 759
Kamon K., Takagishi S., Mori H.; Jap.Journ.Appl.Phys., 25(1986), p L10
Kim M., Hong C., Kasemset D., Milano R.; IEEE El.Dev.Lett., 5(1984), p 306
Manasevit H.M.; Appl.Phys.Lett., 12(1968), p 156
Nakai K., Ozeki M.; J.Cryst.Growth, 68(1984), p 200
Rai-Choudhury P., Schroder D.K.; J.Electrochem.Soc., 118(1971), p 107
Reep D.H., Ghandi S.K.; J.Cryst.Growth, 61 (1983), p 449
Sangster R.C.; Compound Semiconductors (Reinhold, New York, 1962), Vol.1, p 241
Stevens J., Van Daele P., Demeester P., Botte M., Baets R., Lagasse P.; Proceedings of the Fourth European Conference on Integrated Optics, ECHO 87, Glasgow, Scotlani (1987), Editors Wilkinson ani Lamb
Takahashi Y., Sakai S., Umeno M.; J.Cryst.Growth, 68(1984), p 206
Yamaguchi K., Ckamoto K., Imai T.; Jap. J.Appl.Phys., 24(1985), p 1666
Yoshikawa A., Yamamoto A., Hirose M., Sugino T., Itoh K., Kano G., Teramoto I.; In Abstracts of Tenth IEEE international semiconductor laser conference, Kanazawa, Japan, oct. 14–17, 1986 (IEEE Lasers ani Electro-Optics Society, Kanazawa, Japan, 1986), p 8
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1989 Springer Science+Business Media New York
About this chapter
Cite this chapter
Baets, R., Demeester, P., Van Daele, P. (1989). Selective and Nonplanar Metal Organic Vapour Phase Epitaxy. In: Cole-Hamilton, D.J., Williams, J.O. (eds) Mechanisms of Reactions of Organometallic Compounds with Surfaces. NATO ASI Series, vol 198. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2522-0_25
Download citation
DOI: https://doi.org/10.1007/978-1-4899-2522-0_25
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4899-2524-4
Online ISBN: 978-1-4899-2522-0
eBook Packages: Springer Book Archive