Abstract
A fundamental step in OMVPE growth of GaAs on GaAs (100) is the decomposition of an organometallic reagent such as trimethyl gallium (TMG) or triethyl gallium (TEG) on or above a GaAs (100) substrate which is believed to be clean, atomically smooth and As-rich. The absence of significant levels of carbon incorporation is somewhat surprising to a surface chemist since if reactive species such as ethyl or methyl radicals are produced either on the substrate surface or in the gas-phase via pyrolysis of the organometallic, then chemical intuition suggests that some carbon incorporation must occur. Thus it is necessary to invoke specific surface processes capable of removing carbon containing species at a rate considerably higher than the growth rate or assume that alternative decomposition pathways are available for the organometallic. At typical growth temperatures employed in QMVPE growth of GaAs (≈ 600°C) it is highly likely that some gas-phase pyrolysis of the organometallic occurs. Yet recent studies by Stringfellow and co-workers suggest that for the growth of GaAs from TMG and AsH3, the decomposition product is mainly CH4 and forms via addition of hydrogen resulting from the decomposition of AsH3 i.e. the H2 carrier gas is not involved in the decomposition of the organometallic. Thus it is concluded that the average gas-phase free radical concentration is very small.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
C.A. Larsen, N. I. Buchan and G. B. Stringfellow, Appl. Phys. Lett., 52:480 (1988).
J. Nishizawa and T. Kurabayashi, J. Eleetrochem. Soc., 130:413 (1983).
N. I. Buchan, C. A. Larsen and G. B. Stringfellow, Appl. Phys. Lett., 51:1024 (1987).
D. J. Schlyer and M. A. Ring, J. Qrgananetal. Chem., 114:9 (1976).
D. H. Reep and S. K. Ghandhi, J. Electrochem. Soc., 130:675 (1983).
N. Kobayashi and T. Fukui, Elec. Letts., 21 (October 1984).
N. Kobayashi and T. Makimoto, Jap. Jnl. Appl. Phys., 24:L824 (1985).
N. Putz, E. Veuhoff, H. Heinecke, M. Heyen, H. Luth and P. Balk, J. Vac. Sci. Tech., B3:671 (1985).
N. Putz, H. Heinecke, M. Heyen, P. Balk, M. Weyers and H. Luth, J. Cryst. Growth, 74:292 (1986).
T. F. Kuech, E. Veuhoff, T. S. Kuan, V. Deline and R. Potemski, J. Cryst. Growth, 77:257 (1986).
see for example the review of QMVPE by N. J. Mason in: “The Chemistry of the Semiconductor Industry”, Eds. S. J. Moss and A. Ledwith, Blackie (1987).
J. Nishizawa, T. Kurabayashi, H. Abe and A. Nozoe, Surface Science, 185:249 (1987).
Y. R. Shen, J. Vac. Sci. Tech., B3:1464 (1985).
H. W. K. Tom, C. M. Mate, X. D. Zhu, J. E. Crowell, T. F. Heinz, G. A. Somorjai and Y. R. Shen, Phys. Rev. Lett., 52:348 (1984).
M. A. Chesters, J. Electron. Spec, and Rel. Phencm., 38:123 (1986).
M. E. Pemble, Chemtronics, 2:13 (1987).
R. W. Judd, H. J. Allen, P. Hollins and J. Pritchard, Spectrochimica Acta, 43A:1607 (1987).
S. P. DenBaars, B. Y. Maa, P. D. Dapkus, A. D. Danner and H. C. Lee, J. Cryst. Growth, 77:188 (1986).
see for example H. H. Madden, J. Vac. Sci. Tech., 18:677 (1981)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1989 Springer Science+Business Media New York
About this chapter
Cite this chapter
Pemble, M.E., Francis, S.M., Buhaenko, D.S., Goulding, P.A. (1989). Surface Studies at Atmospheric Pressure and Under UHV Conditions During Growth of GaAs. In: Cole-Hamilton, D.J., Williams, J.O. (eds) Mechanisms of Reactions of Organometallic Compounds with Surfaces. NATO ASI Series, vol 198. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2522-0_18
Download citation
DOI: https://doi.org/10.1007/978-1-4899-2522-0_18
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4899-2524-4
Online ISBN: 978-1-4899-2522-0
eBook Packages: Springer Book Archive