Abstract
For many years the growth by chemical vapour deposition of polycrystalline and amorphous layers of thin films for microelectronic applications was carried out in atmospheric pressure, cold wall reactors. At present the standard method for the growth of such layers in the semiconductor industry is by the use of low pressure (e.g. ~0.1–1 mbar) hot wall reactors1. Examples of layers currently being produced by LPCVD within the semiconductor industry include polysilicon, doped polysilicon, silicon dioxide, semi-insulating polysilicon (SIPOS), nitrogen enriched polysilicon, doped silicon dioxide and glasses, tungsten, aluminium, and silicides.
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References
M. L. Hitchman, Vacuum, 34: 377 (1984)
M. L. Hitchman, J. Kane and A. E. Widmer, Thin Solid Films, 59: 231 (1979)
K. F. Jensen, M. L. Hitchman and W. Ahmed, in “Proc 5th European Conf. on CVD”, J-O Carlsson and J. Lindstrom, eds., Uppsala, p. 144 (1985)
M. L. Hitchman and J. Kane, J. Crystal Growth, 55: 485 (1981)
B. S. Meyerson, and W. Olbricht, J. Electrochem. Soc, 131: 2361 (1984)
B. S. Meyerson, and M. L. Yu, J. Electrochem. Soc, 131: 2366 (1984)
M. L. Hitchman, W. Ahmed, S. Shamlian and M. Trainor, Chemtronics, 2: 147 (1987)
R. F. C. Farrow, J. Electrochem. Soc, 121: 899 (1974)
J. H. Purnell, and R. Walsh, Proc. Roy. Soc. A., 293: 543 (1966)
C. G. Newman, H. E. O’Neal, M. A. Ring, F. Leska and N. Shipley Int. J. Chem. Kin., 21: 1167 (1979)
S. M. Gates, D. B. Beach, R. Inbihl, B. A. Scott and J. E. Denmuth, J. Vac Sci. Technol., 5: 628 (1987)
P. John and J. H. Purnell, J. Chem. Soc, 69: 1455 (1973)
G. Inoue and M. Suzuki, Chem. Phys. Letts., 122: 361 (1985)
J. M. Jasinski and J. O. Chu, J. Chem. Phys., in press, (1988)
S. Nakayama, H. Yonezawa and J. Murota, Jap. J. Appl. Phys. 23: L493 (1984)
J. R. Acton and P. T. Squire, “Solving Equations with Physical Understanding”, Adam Hilger, Bristol, (1985)
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Hitchman, M.L., Ahmed, W., Shamlian, S., Trainor, M. (1989). Some Considerations of the Kinetics and Thermodynamics of CVD Processes. In: Cole-Hamilton, D.J., Williams, J.O. (eds) Mechanisms of Reactions of Organometallic Compounds with Surfaces. NATO ASI Series, vol 198. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2522-0_11
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DOI: https://doi.org/10.1007/978-1-4899-2522-0_11
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