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Band Gaps and Phase Transitions in Cubic ZnS, ZnSe and ZnTe

Chapter
Part of the NATO ASI Series book series (NSSB, volume 286)

Abstract

The effect of hydrostatic pressure on the fundamental absorption edge and phase transitions of the zinc chalcogenides is investigated by means of optical absorption and reflection at room temperature. The \( {E_O}(\Gamma _{15}^V \to \Gamma _1^C) \) gap exhibit a sublinear increase under pressure which changes to linear when plotted as a function of the relative change of volume. Various trends, e.g. sublinearity, deformation potentials etc are clearly demonstrated along the sequence ZnS → ZnTe. A transition to a NaCl — type structure occurs at 15‡0.3 and 13.5‡0.3 GPa for ZnS and ZnSe, respectively. The NaCl structures are stable at least up to 27.0 and 25.0 GPa for ZnS and ZnSe. For ZnTe an intermediate phase ZnTe-II appears in the pressure range between 9.3 and 12.0 GPa. At 12.0 GPa a second phase transition takes place and the new structure ZnTe-III is stable at least up to 30.0 GPa. The structures of the intermediate and the high pressure range of ZnTe are not known at present, however the NaCl structure is to be excluded. Absorption and reflectivity data demonstrate conclusively that — contrary to earlier reports — the NaCl — type structure are semiconducting in ZnS, ZnSe as well as the intermediate ZnTe-II phase. The highest ZnTe-III phase is indeed a metallic phase. The experimental results are compared to theoretical calculations based on local empirical pseudopodential and ab initio LMTO calculations.

Keywords

Transition Pressure High Pressure Phase Fundamental Absorption Edge Rocksalt Structure Absorption Coefficient Curve 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    S. Adachi and T. Tagushi Phys. Rev. B41, 9569, (1991).Google Scholar
  2. N. E Christensen, I. C. Gorczyca, O. B. Christensen, U. Schmid, ana M. Cardona, J. Ctyst. Growth, 101, 318, (1990).CrossRefGoogle Scholar
  3. K. Shahzad, D. J. Olego, and C. G. Van de Wall, Phys. Rev. B38,1417, (1987).Google Scholar
  4. C. G. Van de Walle, Phys. Rev. B39,1871, (1989).Google Scholar
  5. 2.
    W. M. Becker, in Semiconductors and Semimetals, edited by R. K. Willarson and A. C. Beer (Academic Près New York, 1988), Vol. 25.Google Scholar
  6. 3.
    L. Quiroga, F. J. Rodriguez, A. Camacho and C. Tejedor Phys. Rev. B42, 11198, (1990).Google Scholar
  7. 4.
    G. A., Samara and H. G. Drikamer, J. Phys. Chem. Solids. 23, 457, (1962).CrossRefGoogle Scholar
  8. 5.
    G. J. Piermarini, H. G. Block Rev. Sci. Instrum. 46, 973, (1975).CrossRefGoogle Scholar
  9. B. A. Weinstein Solid State Commun. 24, 595, (1975).CrossRefGoogle Scholar
  10. 6.
    S. R. Tiong, M. Miramatsu, Y. Matsushima, and E. Ito, Jpn. J. Appl. Phys. 28, 291, (1989).CrossRefGoogle Scholar
  11. 7.
    S. Ves, K. Strößner, N. E. Cristensen, C. K. Kim, and M. Cardona Solid State Commun. 56,479, (1985).CrossRefGoogle Scholar
  12. 8.
    K. Strößner, S. Ves, C. K. Kim, and M. Cardona Solid State Commun. 61,275, (1986).CrossRefGoogle Scholar
  13. 9.
    S. Ves, U. Schwarz, N. E. Christensen, K. Syassen and M. Cardona, Phys. Rev. B42, 9113, (1990) (and references therein).Google Scholar
  14. 10.
    A. Goni, A. Cantarero, K. Syassen and M. Cardona, Phys. Rev. B41, 10111, (1990).Google Scholar
  15. 11.
    B. A Weinstein, R. Zallen, M. L. Slade, and A. de Lozane Phys. Rev. B24 4652, (1981).Google Scholar
  16. 12.
    A. Beliveau and C. Carlone Phys. Rev. B41, 9860, (1990).Google Scholar
  17. 13.
    A. Blacha, H. Presting, and M. Cardona Phys. Status Solidi B126, 11, (1981).Google Scholar
  18. 14.
    N. E Christensen, and O. B. Christensen Phys. Rev. B33, 4739, (1986).Google Scholar
  19. 15.
    J. R. Chelicowsky Phys. Rev. B35,1174, (1987).Google Scholar
  20. 16.
    S. Ves, K. Strößner, C. K. Kim, and M. Cardona Solid State Commun. 55, 327, (1985).CrossRefGoogle Scholar
  21. 17.
    M. S. Hybertsen and S, G. Lanie, Phys. Rev. Lett. 55, 1418, (1985).CrossRefGoogle Scholar
  22. 18.
    S. Ves, U. Schwartz. N.E. Christensen, K. Syassen and M. Cardona. in Proceedings of HighPressure in Semicinductor Physics, Porto Carras, Greece August, (1990), Edited by D. Kyriakos, Suppl. of Annual Scientific Report, of Physics Department of University of Thessaloniki,(1991), Greece, p. 192.Google Scholar
  23. 19.
    P. L. Smith and J. E. Martin, Phys. 19,541, (1965).Google Scholar
  24. 20.
    B. A. Weinstein Solid State Commun. 24, 595, (1977).CrossRefGoogle Scholar
  25. 21.
    Z. Wang and K. Syassen Private communications.Google Scholar
  26. 22.
    K. Strößner, S. Ves, W. Horde, W. Gebhardt and M. Cardona, in Proceedings of the 18th International Conference on the Physics of Semiconductors. Stockholm, 1986, Edited by E. Engström (Word Scientific, Singapore, 1987), p. 1717.Google Scholar
  27. 23.
    W. Andreoni and K. Maske Phys. Rev. B22, 4816, (1980).Google Scholar
  28. 24.
    S. Ves, D. Glötzel, H. Overhof and M. Cardona Phys. Rev. B24, 3073, (1981).Google Scholar
  29. R. K. Singh, and D.C. Kupta, Phys. Rev. B40, 11278, (1989).Google Scholar
  30. 25.
    W. W. Liu and S. Rabi Phys. Rev. B13, 1679, (1976).Google Scholar
  31. 26.
    K. Syassen Private communications; S. Endo, A. Yoneda, M. Ichikawa, S. Tanaka, and S. Kawabe, J. Phys. Soc. Japan, 51,138, (198CrossRefGoogle Scholar
  32. 27.
    G. Weil and J. M. Besson Proceedings of XXVIIIth EHPRG Meeting July, 1990, Bourdeaux, France, Publ. in High Pressure Research and Technology, (in press).Google Scholar

Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • S. Ves
    • 1
    • 2
  1. 1.Max Planck Institut für FestkörperforschungStuttgart 80Germany
  2. 2.Physics Department, Solid State Physics SectionAristotles University of ThessalonikiThessalonikiGreece

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