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2D Transport in Semiconductors Under Pressure

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Frontiers of High-Pressure Research

Part of the book series: NATO ASI Series ((NSSB,volume 286))

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Abstract

Different regimes of conduction in 2D electron gas are examined, emphasizing effects of hydrostatic pressure and external magnetic field on GaAs/GaAlAs heterostructures with a spacer.

As a result of electron transfer in the quantum well controlled by the pressure, various effects can be studied on the same sample by varying the surface electron density.

  1. a)

    Hydrostatic pressure can be used to reach sufficiently low surface electron densities at which the ultra-quantum limit occurs at available magnetic fields. The binding energy of a magneto donor, composed of atoms and electrons separated each other by a spacer is measured for different surface electron densities controlled by the pressure. A metal non metal transition is observed

  2. b)

    In the quantum limit, experiments performed under hydrostatic pressure allow us to analyze the behaviour of the conductivity σxx. Its dependence on the filling factor as well as the temperature shows evidence for the nearest neighbour hopping process in the zero resistance state.

  3. c)

    In the weak localization regime, the relevant parameter kFlo is varied over two orders of magnitude by applying a pressure (kF is the Fermi wave vector, lo is the mean free path). As a result the weak localization is investigated on the same sample between the dirty and pure limits.

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Author information

Authors and Affiliations

  1. G.E.S. U.S.T.L. URA 357, place E. Bataillon, 34095, Montpellier-Cedex, France

    J. L. Robert

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  1. J. L. Robert
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Editor information

Editors and Affiliations

  1. Colorado State University, Fort Collins, Colorado, USA

    Hans D. Hochheimer  & Richard D. Etters  & 

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© 1991 Springer Science+Business Media New York

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Robert, J.L. (1991). 2D Transport in Semiconductors Under Pressure. In: Hochheimer, H.D., Etters, R.D. (eds) Frontiers of High-Pressure Research. NATO ASI Series, vol 286. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2480-3_30

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  • DOI: https://doi.org/10.1007/978-1-4899-2480-3_30

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-2482-7

  • Online ISBN: 978-1-4899-2480-3

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