High Pressure Studies of Impurities in Semiconductors

  • R. A. Stradling
Part of the NATO ASI Series book series (NSSB, volume 286)


For many years it has been known that those common semiconducting compounds with their lowest conduction band minimum located at the centre of the Brillouin zone (eg GaAs, GaSb, CdTe) have levels resonant with the Γ conduction band in addition to the normal Γ-associated shallow donors (see the review by Paul, 1968). These resonant donor levels can be made to emerge into the forbidden gap by the application of hydrostatic pressure. A sufficiently large pressure will cause a realignment of the bands where the Γ-minimum crosses the L-or X-extrema. The resonant levels emerge into the gap at pressures substantially less than those required to cause band-crossing. Initially this was thought to be simply due to the larger effective masses in the higher extrema with each level being rigidly tied to each critical point in the band structure. This view was supported by the similarity of the pressure coefficients for the activation energies of the impurities observed at high pressures with those found for the band extrema. However, the multiplicity of levels found and the realisation that the positions of many of the levels with respect to the higher order band minima was much greater than the respective effective-mass binding energies showed that the resonant levels are in fact ‘deep’ and are made up of admixtures of states taken from all over the Brillouin zone.


Shallow Donor Diamond Anvil Cell Deep State Shallow State Resonant Level 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. Baraff, G. A., Semicond. Sci. & Tech. to be published, 1991 in the Procedings of the Mautendorf Workshop on DX and Other Metastable Centres.Google Scholar
  2. Brunei, L.-C, Huant, S., Baj, M., Trzeciakowski, W., 1986, Phvs.Rev. B33:6863.Google Scholar
  3. Chadi, D. J. & Chang K.J., 1989, Phvs Rev B39.:10063.Google Scholar
  4. Dmochowski, J.E., Wang, P.D. & Stradling, R.A., 1990, Proc. Int Conf on Physics of Semiconductors (Thesseloniki) 658-661.Google Scholar
  5. Dmochowski, J.E., Wang, P.D., & Stradling, R.A., 1991a, Semicond. Sei & Tech 6:118.CrossRefGoogle Scholar
  6. Dmochowski, J.E., Stradling, R.A., Wang, P.D., Holmes, S.N., McCombe, B.D., & Weinstein, B., 1991b, Semicond. Sei & Tech 6:476.CrossRefGoogle Scholar
  7. El-Sabbahy, A.N., Adams, A.R., 1978, Proc. Int. Conf. on Physics of Semiconductors (Edinburgh), Inst. of Physics Conf. Series 43 589.Google Scholar
  8. Henning, J.C.M., & Ansems, J.P.M., 1987, Semicond. Sci. & Tech. 2:1.CrossRefGoogle Scholar
  9. Henning, J.C.M., & Ansems, J.P.M., 1988, Semicond. Sci. & Tech. 3:361.CrossRefGoogle Scholar
  10. Kadri, A., Aulombard, R.L., Zitouni, K., Baj, M., Konczewicz, L., 1985, Phvs. Rev. B31:8013.Google Scholar
  11. Konczewicz, L., Litwin-Staszewska, E., & Porowski, S.,1977, Proc. Int Conf on Physics of Narrow Gap Semiconductors (Warsaw) p211.Google Scholar
  12. Landolt & Bornstein New Series III 22a (Ed 0. Madelung, pub. Springer-Verlag) pl 17.Google Scholar
  13. Lang, D.V., 1978, Proc. Int. Conf. on Physics of Semiconductors (Edinburgh), Inst. of Physics Conf. Series 43:433.Google Scholar
  14. Leroux, M., Neu, G., Verie, C., 1986, Sol.St.Commun., 58:289.CrossRefGoogle Scholar
  15. Litwin-Staszewska, E., Porowski, S., Filipchenko, A.S., 1971, Phvs. Stat. Solidi (b) 48:525.CrossRefGoogle Scholar
  16. Maude, D.K., Portal, J.C., Dmowski, L., Foster, T., Eaves, L., Nathan, M., Heiblum, M., Harris, J.J., Beall, R.B., 1987, Phvs.Rev.Lett.. 59:815.CrossRefGoogle Scholar
  17. Maude, D.K., Eaves, L., Foster, T.J., & Portal, J.C.; 1989, Phys Rev Lett 62:1922.CrossRefGoogle Scholar
  18. Paul, W., 1968, Proc Int Conf on Phys Semiconductors (Moscow) p16.Google Scholar
  19. Skuras, E., Kumar, R., Williams, R.L., Stradling, R.A., Dmochowski, J.E., Johnson, E.A., Harris, J.J., Beall, R.B., Skierbeszewski, C, Singleton, J., van der Wei, P.J., & Wisniewski, P.: 1991, Semicond. Sci. Tech. 6:535.CrossRefGoogle Scholar
  20. Wasilewski, Z., Davidson, A.M., Stradling, R.A., Porowski, S., 1982, Lecture Notes in Physics, 177, 233.CrossRefGoogle Scholar
  21. Wasilewski, Z., Stradling, R.A., 1986a, Semic.Sei.Technol. 1:264.CrossRefGoogle Scholar
  22. Wasilewski, Z., Stradling, R.A., & Porowski, S., 1986b, Solid State Comm. 57:123.CrossRefGoogle Scholar
  23. Wolford, D.J., Bradley, J.A., 1985, Sol. St. Commun. 53:1069.CrossRefGoogle Scholar
  24. Zhang, S. B., & Chadi, D. J., 1990, Phvs Rev B42:7174.Google Scholar

Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • R. A. Stradling
    • 1
  1. 1.Interdisciplinary Research Centre in Semiconductor Materials and Physics Department, Blackett LaboratoryImperial CollegeLondonUK

Personalised recommendations