Optical Investigation of CdxZn1−xTe/ZnTe Superlattices at High Pressure
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We have measured and analyzed the photoluminescence spectra from MBE grown CdxZn1−xTe/ZnTe strained layer superlattices under high pressure. In these superlattices, the electrons and heavy holes are confined in the CdxZn1−xTe layer (type I) while the light holes are confined in the ZnTe layer (type II). The low temperature photoluminescence is typically dominated by a strong feature due to the decay of the light-hole exciton, and weaker features due to the decay of the heavy-hole exciton and due to luminescence from an excited quantum well state. We report the pressure dependence of the photoluminescence up to 6.8 GPa. Our results are consistent with a small valence band offset between CdTe and ZnTe. We have measured the difference of the hydrostatic valence band deformation potentials.
KeywordsValence Band Heavy Hole Diamond Anvil Cell Light Hole Band Alignment
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