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Hydrostatic Pressure Investigations of Quantum-Well Optoelectronic Devices

  • A. R. Adams
Chapter
Part of the NATO ASI Series book series (NSSB, volume 286)

Abstract

Quantum wells and superlattices offer exciting new possibilities for engineering the electronic band structure of semiconductor optoelectronic devices. Hydrostatic pressure also causes changes in the band structure which in many respects mimic the effects of quantum confinement and hence allows a systematic study to be made by varying the pressure on a single device. This avoids unwanted chemical changes that can occur when the band structure is varied in a growth sequence and thus allows parameters dependent only on the band structure to be clearly identified.

Keywords

Valence Band Breakdown Voltage Impact Ionisation Avalanche Photodiode Strained Layer Superlattices 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • A. R. Adams
    • 1
  1. 1.Department of PhysicsUniversity of SurreyGuildfordUK

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