Abstract
Quantum wells and superlattices offer exciting new possibilities for engineering the electronic band structure of semiconductor optoelectronic devices. Hydrostatic pressure also causes changes in the band structure which in many respects mimic the effects of quantum confinement and hence allows a systematic study to be made by varying the pressure on a single device. This avoids unwanted chemical changes that can occur when the band structure is varied in a growth sequence and thus allows parameters dependent only on the band structure to be clearly identified.
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References
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© 1991 Springer Science+Business Media New York
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Adams, A.R. (1991). Hydrostatic Pressure Investigations of Quantum-Well Optoelectronic Devices. In: Hochheimer, H.D., Etters, R.D. (eds) Frontiers of High-Pressure Research. NATO ASI Series, vol 286. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2480-3_25
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DOI: https://doi.org/10.1007/978-1-4899-2480-3_25
Publisher Name: Springer, Boston, MA
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