Abstract
Hydrostatic pressure (P) is an important tool for the study of semiconductor heterostructures. It can tune their electronic energy bands, and as a consequence, has been used to study the band offset at heterointerfaces,[1] the possibility of tunable quantum well lasers,[2] and the indirect-gap related DX-defects.[3] The phase stability of heterostructures can be studied under high pressure more conveniently than by modifying chemical composition, and novel superpressing phenomena have been observed.[4] Phase stability is discussed elsewhere in this proceedings.[5] External hydrostatic pressure can also affect the mechanical stability of heterostructures by tuning lattice mismatch.[6] This tuning is of interest and importance for strained-layer heterostructures now finding wide device applications, since lattice-mismatch strain can strongly influence electronic properties.[7]
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References
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Cui, L.J., Venkateswaran, U.D., Weinstein, B.A., Jonker, B.T., Chambers, F.A. (1991). Influence of Pseudomorphic Constraints on the Pressure-Response of Semiconductor Heterostructures. In: Hochheimer, H.D., Etters, R.D. (eds) Frontiers of High-Pressure Research. NATO ASI Series, vol 286. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2480-3_24
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