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Influence of Pseudomorphic Constraints on the Pressure-Response of Semiconductor Heterostructures

  • L. J. Cui
  • U. D. Venkateswaran
  • B. A. Weinstein
  • B. T. Jonker
  • F. A. Chambers
Chapter
Part of the NATO ASI Series book series (NSSB, volume 286)

Abstract

Hydrostatic pressure (P) is an important tool for the study of semiconductor heterostructures. It can tune their electronic energy bands, and as a consequence, has been used to study the band offset at heterointerfaces,[1] the possibility of tunable quantum well lasers,[2] and the indirect-gap related DX-defects.[3] The phase stability of heterostructures can be studied under high pressure more conveniently than by modifying chemical composition, and novel superpressing phenomena have been observed.[4] Phase stability is discussed elsewhere in this proceedings.[5] External hydrostatic pressure can also affect the mechanical stability of heterostructures by tuning lattice mismatch.[6] This tuning is of interest and importance for strained-layer heterostructures now finding wide device applications, since lattice-mismatch strain can strongly influence electronic properties.[7]

Keywords

Hydrostatic Pressure Bulk Modulus Strain Component Misfit Strain Biaxial Strain 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer Science+Business Media New York 1991

Authors and Affiliations

  • L. J. Cui
    • 1
  • U. D. Venkateswaran
    • 1
  • B. A. Weinstein
    • 1
  • B. T. Jonker
    • 2
  • F. A. Chambers
    • 3
  1. 1.Physics Dept.SUNYBuffaloUSA
  2. 2.Naval Research LaboratoryUSA
  3. 3.Amoco Technology Co.NapervilleUSA

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