Abstract
In this chapter an overview on electronic phenomena in semiconductor superlattices will be given. In Section 10.2 we will briefly outline the basic considerations for designing the subband structure of compositional and doping superlattices. More details on the microscopic nature of the electronic states are to be found in Chapter 1. Our goal in Section 10.3 is to demonstrate that superlattices provide unique conditions for observing “high-field phenomena,” which may never occur in bulk semiconductors. The peculiarities of optical transitions in compositional and doping superlattices, with emphasis on field effects and nonlinearities will be discussed in Section 10.4. The last two sections are devoted to two topics specifically related to n-i-p-i doping superlattices. In Section 10.5 we will discuss the strong dependence of optical interband transition probabilities on magnetic fields in two-dimensional systems with spatially separated electron and hole states. Finally we discuss the potential of δ-doped n-i-p-i structures for studying the electronic structure and the transport properties of two-dimensional impurity bands as a function of occupancy and “filling factor” (doping density) × (effective Bohr radius)2 in Section 10.6.
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Döhler, G.H. (1993). Electrons in Superlattices. In: Butcher, P., March, N.H., Tosi, M.P. (eds) Physics of Low-Dimensional Semiconductor Structures. Physics of Solids and Liquids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2415-5_10
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DOI: https://doi.org/10.1007/978-1-4899-2415-5_10
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