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Wigner Function Modeling of the Resonant Tunneling Diode

  • Chapter
Quantum Transport in Semiconductors

Part of the book series: Physics of Solids and Liquids ((PSLI))

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Abstract

In recent years a number of techniques have been developed which have allowed semiconductor devices to be fabricated with ever-smaller feature sizes. Using MBE and MOCVD epitaxial growth techniques,(1) the composition of semiconductor wafers can be controlled on atomic length scales. This leads to potential variations along one (growth) direction that vary on scales as small as one atomic layer. Using electron-beam and x-ray lithographies, it has also become possible to pattern gates with characteristic features on the scale of a few tens of nanometers. These small scales are comparable to the wavelengths of the electrons and holes within the devices. In this regime, device modeling cannot be based on a classical picture augmented by quantum corrections and parameters; it must incorporate quantum mechanics at a fundamental level.

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Author notes

  1. A. M. Kriman

    Present address: Department of Electrical and Computer Engineering, State University of New York at Buffalo, Buffalo, New York, 14260, USA

  2. N. C. Kluksdahl

    Present address: Ford Aerospace, Houston, Texas, 77058, USA

Authors and Affiliations

  1. Department of Electrical Engineering, Arizona State University, Tempe, Arizona, 85287, USA

    A. M. Kriman & N. C. Kluksdahl

  2. Center for Solid State Electronic Research, College of Engineering and Applied Science, Arizona State University, Tempe, Arizona, 85287, USA

    David K. Ferry

  3. Department of Mathematics, Arizona State University, Tempe, Arizona, 85287, USA

    C. Ringhofer

Authors
  1. A. M. Kriman
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  2. N. C. Kluksdahl
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  3. David K. Ferry
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  4. C. Ringhofer
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Editor information

Editors and Affiliations

  1. Center for Solid State Electronics Research, College of Engineering and Applied Sciences, Arizona State University, 85287, Tempe, Arizona, USA

    David K. Ferry

  2. Dipartimento di Fisica, Università di Modena, 41100, Modena, Italy

    Carlo Jacoboni

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© 1992 Springer Science+Business Media New York

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Kriman, A.M., Kluksdahl, N.C., Ferry, D.K., Ringhofer, C. (1992). Wigner Function Modeling of the Resonant Tunneling Diode. In: Ferry, D.K., Jacoboni, C. (eds) Quantum Transport in Semiconductors. Physics of Solids and Liquids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2359-2_11

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  • DOI: https://doi.org/10.1007/978-1-4899-2359-2_11

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