Abstract
It is known [1] that the suicide formation between silicon and transition, as well as noble, metals occurs at 0.3 – 0.4 of the melting temperature of silicon. It is proposed that the chemical reaction is preceded by an interfacial “melting” process due to defect generation (dislocation or disclination) via the Kösterlitz-Thouless mechanism. This is possible at temperatures lower than the melting temperature due to overall softening of the shear vibration mode of the surface silicon layers, and may lead to the low temperature chemical reaction observed. The softening mechanism of atoms on the (111) surface of silicon due to metal overlayer is suspected to be both elastic and electronic in origin, and leads to the breaking of the strong covalent silicon bonds (~ 2eV, bond) at low temperatures.
Currently visiting Energy Conversion Devices, Inc. An abridged version of the paper was presented at the 17th International Conference on Physics of Semiconductors, San Francisco, August 6–10, 1984
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Chakraverty, B.K. (1985). Dislocation Mediated Pseudo-Melting at Silicon-Metal Interfaces. In: Adler, D., Schwartz, B.B., Steele, M.C. (eds) Physical Properties of Amorphous Materials. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2260-1_8
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