Abstract
Recently, K. v. Klitzing at the University of Würzburg, Federal Republic of Germany, discovered a new method for the accurate determination of h/e2 (h Planck constant and e elementary charge) [1], using a novel quantum effect appearing on a macroscopic scale in MOSFETs. This method allows the first almost direct measurement of the fine structure constant α and makes it possible to reproduce and realize the unit of electrical resistance, the SI ohm, in a new way.
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References
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© 1983 Springer Science+Business Media New York
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Bliek, L., Kose, V. (1983). Quantized Hall Resistance and the Realization of the SI ohm. In: Cutler, P.H., Lucas, A.A. (eds) Quantum Metrology and Fundamental Physical Constants. NATO Advanced Science Institutes Series, vol 98. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2145-1_13
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DOI: https://doi.org/10.1007/978-1-4899-2145-1_13
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