Abstract
The state of understanding concerning hydrogen at semiconductor surfaces (external and internal) will be reviewed, the emphasis being on silicon and germanium. Topics will include hydrogen at crystalline-vacuum interfaces in ultra-high-vacuum systems, at grain boundaries in polycrystalline material, and at internal defect surfaces as arise in irradiated or ion-implanted material. The atomic configurations of hydrogen in semiconductors will be surveyed, including both monoatomic hydrogen [H] and molecular hydrogen [H2]. The diffusion coefficients and profiles associated with free [H] diffusion, trapping of [H] at defects, and formation of [H2] will be covered. The role of hydrogen in passivating defects will be discussed, as will the passivation mechanisms (bonding and non-bonding), and defect/surface reconstruction and chemically driven reconstruction.
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Corbett, J.W., Peak, D., Pearton, S.J., Sganga, A.G. (1986). Hydrogen on Semiconductor Surfaces. In: Bambakidis, G., Bowman, R.C. (eds) Hydrogen in Disordered and Amorphous Solids. NATO ASI Series, vol 136. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2025-6_7
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