Abstract
One of the most important applications of GaAs FETs is in small signal amplifier components. High-frequency low-noise GaAs FETs are used in phase-array radars, signal processors, space based electronic detection systems, tracking devices, and digital transmitter-receivers. In particular, GaAs low-noise amplifiers are used in communication equipment for the 3.7–4.2-GHz television receive-only (TVRO) band and for the 12-GHz direct broadcast satellite (DBS) band. The DBS receivers represent a large potential market for GaAs components.
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References
M. Cuevas, A microprocessor mediates the noise figure debate, Microwaves December, 51 (1981).
A. van der Ziel, Thermal noise in field effect transistor, Proc. IRE 50, 1808–1812 (1962).
A. van der Ziel, Gate noise in field effect transistors at moderately high frequencies, Proc. IRE 51, 462–467 (1963).
C. A. Liehti, Microwave field-effect transistors, IEEE Trans. Microwave Theory Technique MTT-24, 279–300 (1976).
R. A. Pucel, H. A. Haus, and H. Statz, Signal and noise properties of gallium arsenide microwave field-effect transistors, in Advances in Electronics and Electron Physics, Vol. 38, Academic, New York, 1975, pp. 195–265.
H. Fukui, Optimum noise figure of microwave GaAs MESFETs, IEEE Trans. Electron Devices ED-26, 1032–1037 (1979).
H. Fukui, Determination of the basic device parameters of a GaAs MESFET, Bell Syst. Tech. J. 58, 771–797 (1979).
A. Podeli, A Functional GaAs FET noise model, IEEE Trans. Electron Devices ED-28(5), 511–517 (1981).
R. W. H. Engelmann and C. A. Liechti, Gunn domain formaton in the saturated region of GaAs MESFETs, IEDM Tech. Digest Dec. 351–354 (1976).
R. W. H. Engelmann and C. A. Liechti, Bias dependence of GaAs and InP MESFET parameters, IEEE Trans. Electron Devices ED-24(11), 1288–1296 (1977).
M. S. Shur and L. F. Eastman, Current-voltage characteristics, small-signal parameters and switching times of GaAs FETs, IEEE Trans. Electron Devices ED-25(6), 606–611 (1978).
R. E. Neidert and C. J. Scott, Computer program for microwave GaAs MESFET modeling, NRL Report 8561, Naval Research Laboratory, February 12, 1982.
M. Reiser, Two-dimensional analysis of substrate effects in junction FETs, Electron. Lett. 6, 493–494 (1970).
L. F. Eastman and M. S. Shur, Substrate current in GaAs MESFETs, IEEE Trans. Electron Devices ED-26, 1359–1361 (1979).
R. A. Kiehl and G. C Osborn, Physics of short gate GaAs MESFETs from hydrostatic pressure studies. , IEEE Trans Electron Devices ED-28(8), (1981).
W. C Bruncke and A. Van. der Ziel, Thermal noise in junction gate field effect transistor, IEEE Trans. Electron Devices ED-13, 323–329 (1966).
J. A. Turner, R. S. Butlin, D. Parker, R. Bennet, A. Peake, and A. Hughes, The noise and gain performance of submicron gate length GaAs FETs, in GaAs FET Principles and Technology, Ed. by J. V. DiLorenzo and D. D. Khandelwal, Arctech House, Dedham, Massachusetts, 1982, pp. 151–174.
F. Hasegawa, Low Noise GaAs FETs, in GaAs FET Principles and Technology, Ed. by J. V. DiLorenzo and D. D. Khandelwal, Arctech House, Dedham, Massachusetts, 1982, pp. 177–193.
NEC application notes, published by California Eastern Labs., Inc., exclusive sales agent for NEC Corporation, Santa Clara, California (1983).
K. Kamei, H. Kawasaki, T. Chigua, T. Nakanier, T. Kawabuchi, and M. Yoshimi, Extremely low-noise MESFETs fabricated by metelorganic chemical vapor deposition, Electron. Lett. 17, 450–451 (1981).
C. H. Oxley, A. H. Peake, R. H. Bennet, J. Arnold, and R. S. Butlin, Q-band (26–40 GHz) GaAs FETs, IEDM Tech. Digest Dec, 680–683 (1981).
P. W. Chye and C. Huang, Quarter micron low noise GaAs FET’s, IEEE Electron Device Lett. EDL-3EDL-3(12), 401–403 (1982).
W. R. Frensley, Power limiting breakdown effects in GaAs MESFETs, IEEE Trans. Electron Devices ED-28(8), 962–970 (1981).
S. H. Wemple, W. C Niehaus, H. M. Cox, J. V. DiLorenzo, and W. O. Schlosser, Control of gate-drain avalanche in GaAs MESFETs, IEEE Trans. Electron Devices ED-27, 1013–1018 (1980).
W. C Niehaus, S. H. Wemple, L. A. D’Asaro, H. Fukui, J. C. Irvin, H. M. Cox, J. V. DiLorenzo, J. C. M. Hwang, and W. O. Schlosser, GaAs power FET design, in GaAs FET Principles and Technology, Ed. by J. V. DiLorenzo and D. D. Khandeiwal, Arctech House, Dedham, Massachusetts, 1982, pp. 279–306.
F. Hasegawa, Power GaAs FETs, in GaAs FET Principles and Technology, Ed. by J. V. DiLorenzo and D. D. Khandelwal, Arctech House, Dedham, Massachusetts, 1982, pp. 219–255.
L. F. Eastman, S. Tiwari, and M. S. Shur, Design criteria for GaAs MESFETs related to stationary high field domains, Solid State Electron. 23, 383–389 (1980).
M. S. Shur, L. F. Eastman, S. Judraprawira, J. Gammel, and S. Tiwari, Design Criteria for GaAs MESFETs related to stationary high field domains, IEDM Tech. Digest Dec, 381–383 (1978).
H. Macksey, R. L. Adams, D. N. McQuiddy, and W. R. Wisseman, X-band performance of GaAs power FETs, Electron. Lett. 12(2), (1976).
I. Drukier, Power GaAs FETs, in GaAs FET Principles and Technology, Ed. by J. V. DiLorenzo and D. D. Khandelwal, Arctech House, Dedham, Massachusetts, 1982, pp. 202–217.
I. Drukier et al, Electron. Lett. 11, 104 (1975).
Y. Mitsui et al., Europian Microwave Conference Technical Digest, p. 272, 1979.
L. A. D’Asaro, J. V. DiLorenzo, and H. Fukui, IEDM Tech. Digest, 370 (1977).
B. S. Hewitt et al., European Microwave Conference Technical Digest, p. 265, 1979.
S. H. Wemple and H. C Huang, Thermal Design of Power GaAs FETs, in GaAs FET Principles and Technology, Ed. by J. V. DiLorenzo and D. D. Khandelwal, Arctech House, Dedham, Masachusetts 1982, pp. 309–347.
S. Tiwari, L. F. Eastman, and L. Rathburn, Physical and material limitations on burnout voltage of GaAs power MESFETs, IEEE Trans. Electron Devices ED-27, 1045 (1980).
T. Furutsuka, T. Tsuji, and F. Hasegawa, IEEE Trans. Microwave Theory Technique MTT-24, 512 (1978).
P. Ladbrooke and A. L. Martin, Material and structure factors affecting the large signal operation of GaAs MESFETs, International Conference on Semi-insulating GaAs, p. 313, France.
K. Morizane, M. Dosen, and Y. Mori, A mechanism of source-drain burnout in GaAs MESFETs, Inst. Phys. Conf. Ser. 45, 287 (1979).
R. C. Clarke, A high-efficiency castellated gate power FET, in Proceedings of IEEEJCornell Conference on High-Speed Semiconductor Devices and Circuits, IEEE Cat. No. 83chl959–6, pp. 93–111, Ithaca, New York, 1983.
H. M. Macksey and F. H. Doerbeck, GaAs FETs having high output power per unit gate width, IEEE Electron Device Lett. EDL-2(6), 147–148 (1981).
H. M. Macksey, R. L. Adams, D. N. McQuiddy, D. W. Shaw, and W. R. Wisseman, Dependence of GaAs power MESFET microwave performance on device and material parameters, IEEE Trans. Electron Devices ED-24(2), 113–122 (1977).
H. M. Macksey, GaAs power FET design, in GaAs FET Principles and Technology, Ed. by J. V. DiLorenzo and D. D. Khandelwal, Arctech House, Dedham, Massachusetts, 1982, pp. 257–275.
P. Saunier and H. D. Shih, State-of-the-art K-band GaAs power field effect transistors prepared by molecular beam epitaxy, IEEE Trans. Elecron Devices ED-30(11), 1599 (1983).
M. Armand, D. V. Bui, J. Chevrier, and N. T. Linh, High power microwave amplification with InP MISFETs, in Proceedings of IEEE/Cornell Conference on High-Speed Semiconductor Devices and Circuits, IEEE Cat. No. 83chl959–6, pp. 218–225, Ithaca, New York, 1983.
T. M. Hyltin, Microstrip transmission on semiconductor substrates, IEEE Trans. Microwave Theory Tech. MTT-13, 777–781 (1965).
E. Mehal and R. W. Wacker, GaAs integrated microwave circuits, IEEE Trans. Microwave Theory Tech. MTT-16, 451–454 (1968).
R. S. Pengelly and J. A. Turner, Monolithic broadband GaAs FET amplifiers, Electron. Lett. 12, 251–252 (1976).
R. A. Pucel, Design considerations for monolithic microwave circuits, IEEE Trans. Microwave Theory Techniques MTT-29(6), 513–534 (1981).
C. Kermarrec, J. Gaguet, P. Harrop, and C. Tsironis, Monolithic circuits for 12 GHz direct broadcasting satellite reception, in Proc. 1982 Microwave and Millimeter-Wave Monolithic Circuits Symp., June 1982, Dallas, p. 5.
W. C Petersen, A. K. Gupta, and D. R. Decker, A monolithic GaAs dc to 2 GHz feedback amplifier, IEEE Trans. Electron Devices ED-30, 27–29 (1983).
R. L. Van Tuyl, V. Kumar, D. C D’Avanzo, T. W. Taylor, V. E. Peterson, D. P. Hornbuckle, R. A Fisher, and D. B. Estreich, A manufacturing process for analog and digital gallium arsenide integrated circuits, IEEE Trans. Electron Devices ED-29(7), 1032–1037 (1982).
A. K. Gupta, W. C Petersen, and D. R. Decker, Yield considerations for ion implanted GaAs MMICs, IEEE Trans. Electron Devices ED-30, 16–20 (1983).
L. R. Decker, W. C Petersen, and A. K. Gupta, Monolithic GaAs microwave analog integrated circuits, Electronics Technology and Devices Lab., Technical report No. DELET-TR-78–2999-F Final Report, Aug. 1982.
A. K. Gupta, D. P. Siu, and K. T. Ip, Low-noise MESFETs for ion-implanted GaAs MMICs, IEEE Trans. Electron Devices ED-30(12), 1850–1854 (1983).
V. Sokolov, J. J. Geddes, A. Contolatis, P. E. Bauhahn, and C. Chao, A Ku-band GaAs monolithic phase shifter, IEEE Trans. Electron Devices ED-30(12), 1855–1861 (1983).
T. Sugiura, H. Itoh, T. Tsuji, and K. Honjo, 12 GHz-band low-noise GaAs monolithic amplifiers, IEEE Trans. Electron Devices ED-30(12), 1861–1866 (1983).
S. Hori, K. Kaprei, K. Shibata, M. Tatematsu, K. Mishima, and S. Okana, GaAs monolithic MIC’s for direct broadcast satellite receivers, IEEE Trans. Electron Devices ED-30(12), 1867–1874 (1983).
G. Avery, The GaAs IC industry structure—Present and future, GaAs IC Symposium Technical Digest, p. 3, Phoenix, Arizona, October 1983.
T. Sugiura, K. Honjo, and T. Tsuji, 12 GHz-band GaAs dual-gate MESFET monolithic mixers, GaAs IC Symposium Technical Digest, pp. 3–6, Phoenix, Arizona, October 1983.
S. Moghe, T. Andrade, G. Policky, and C. Huang, A wideband two stage miniature amplifier, GaAs IC Symposium Technical Digest, pp. 7–10, Phoenix, Arizona, October 1983.
G. Kaelin, J. Seligman, and A. Gupta, 20 GHz two stage low noise monolithic amplifier, GaAs IC Symposium Technical Digest, pp. 11–12, Phoenix, Arizona, October 1983.
B. Considine and D. Wandrei, X-band receive module using monolithic GaAs MMIC’s, GaAs IC Symposium Technical Digest, pp. 13–15, Phoenix, Arizona, October 1983.
H. Finlay, J. Jenkins, R. Pengelly, and J. Cockrill, Accurate coupling predictions and assessments in MMIC networks, GaAs IC Symposium Technical Digest, pp. 16–19, Phoenix, Arizona, October 1983.
M. Le Brun, P. Jay, C. Rumelhard, G. Rey, and P. Delescluse, Monolithic microwave ampifier using a two-dimensional electron GAS FET—A comparison with GaAs, GaAs IC Symposium Technical Digest, pp. 20–24, Phoenix, Arizona, October 1983.
C. Suckling, M. Williams, T. Banbridge, R. Pengelly, K. Vanner, and R. S. Butlin, An 5-band phase shifter using monolithic GaAs circuits, GaAs IC Symposium Technical Digest, pp. 102–105, Phoenix, Arizona, October 1983.
Y. Ayasli, R. Mozzi, T. Tsukii, and L. Reynolds, 6–19 GHz GaAs FET transmit-receive switch, GaAs IC Symposium Technical Digest, pp. 106–108, Phoenix, Arizona, October 1983.
E. Strid, A monolithic 10 GHz vector modulator, GaAs IC Symposium Technical Digest, pp. 109–112, Phoenix, Arizona, October 1983.
G. Kaelin, J. Seligman, and A. Gupta, A wide band medium-power monolithic microwave amplifier, GaAs Symposium Technical Digest, pp. 113–114, Phoenix, Arizona, October 1983.
J. Dormail, Y. Tajima, R. Mozzi, M. Durschlag, S. McOwen, and A. Morris, A 2–8 GHz 2-watt monolithic amplifier, GaAs IC Symposium Technical Digest, pp. 115–118, Phoenix, Arizona, October 1983.
W. Petersen and A. Gupta, A three-stage power amplifier for a 20 GHz monolithic transmit module, GaAs IC Symposium Technical Digest, pp. 119–122, Phoenix, Arizona, October 1983.
L. C Upadhyayula, M. Kumar, and H. C. Huang, GaAs MMICs could carry the waves of the high-volume future, Microwave Syst. News July, 58 (1983).
H. Q. Tserng and H. M. Macksey, Performance of monolithic GaAs FET oscillators at J-band, IEEE Trans. Electron Devices ED-28, 163–165 (1981).
M. Kumar, G. C. Taylor, and H. C. Huang, Monolithic dual-gate FET amplifier, IEEE Trans. Electron. Devices ED-28, 197–198 (1981).
M. Kumar, S. N. Subbarao, R. J. Menna, and H. C Huang, Monolithic GaAs interdigitated couplers, IEEE Trans. Microwave Theory Techniques MMT-31(1), 29–32 (1983).
M. Kumar, S. N. Subbarao, R. J. Menna, and H. C. Huang, Broadband active phase shifter using dual-gate MESFET, IEEE Trans. Microwave Theory Techniques MTT-29, 1098–1102 (1981).
R. L. Vantuyl and C. Liechti, High-speed GaAs MSI, ISSCC Digest of Technical Papers, pp. 20–21, February 1976.
L. C. Upadhyayula, GaAs FET comparators for high-speed analog-to-digital conversion, in Digest of Technical Papers, GaAs IC Symp., Lake Tahoe, NE, Sept. 1979.
L. C Upadhyayula, W. R. Curtice, and R. Smith, Design, fabrication and evaluation of 2- and 3-bit GaAs MESFET analog-to-digital converter ICs, IEEE Trans. MTT MTT-31(1), 2 (1983).
W. C Petersen, D. R. Decker, A. K. Gupta, J. Dully, and D. R. Ch’en, A monolithic GaAs 0.1 to 10 GHz amplifier, IEEE MTT-S Symposium Digest, No. 81CH1592–5, pp. 354–355, June 1981.
Y. Ayasli, R. Mozzi, L. Hanes, and L. D Reynolds, An X-band 10 W monolithic transmit-receive GaAs FET switch, 1982 Monolithic Circuits Symposium Digest, IEEE catalog No. 82CH1784–8, pp. 42–46.
M. Kumar, S. N. Subbarao, R. J. Menna, and H. C Huang, Monolithic GaAs interdigitated 90° hybrids with 50- and 25-Ohm impedance, 1982 Monolithic Circuits Symposium Digest, IEEE catalog No. 82Chl794–9, pp. 50–53.
G. E. Brehm and R. E. Lehmann, Monolithic GaAs FET low-noise amplifiers for X-band applications, Microwave J. 25(11), 103–107 (1982).
M. C. Driver, G. W. Eldridge, and J. E. Degenford, Broadband monolithic integrated power amplifiers in GaAs, Microwave J. 25(11), 87–94 (1982).
A. Contolatis, C. Chao, S. Jamison, and C. Butter, Ku-band monolithic GaAs balanced mixers, 1982 Monolithic Circuits Symposium Digest, IEEE catalog No. 82CH1784–8, pp. 28–30.
B. N. Scott and G. E. Brehm, Monolithic voltage controlled oscillator for X and Ku-bands, IEEE MTT-S Symposium Digest, No. 82CH1705–3, pp. 482–485, June 1982.
D. R. Decker, Are MMICs a fad or fact?, Microwave Syst. News 13(7) (1983).
L. Besser, Synthesize amplifiers exactly, Microwave Syst. News Oct., 28–40 (1979).
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Shur, M. (1987). GaAs FET Amplifiers and Microwave Monolithic Integrated Circuits. In: GaAs Devices and Circuits. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1989-2_8
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