Abstract
Transferred electron amplifiers were first developed by Thim et al. in 1965 [1], who used subcritically doped devices [n 0 L < (n 0 L) 1 ; see Section 4–1] to achieve microwave amplification. Since that time other types of transferred electron amplifiers have been developed with the output power up to several tenths of watts. Even higher output powers are possible.
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Shur, M. (1987). Transferred Electron Amplifiers and Logic and Functional Devices. In: GaAs Devices and Circuits. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1989-2_6
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DOI: https://doi.org/10.1007/978-1-4899-1989-2_6
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