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Ridley-Watkins-Hilsum-Gunn Effect

  • Chapter
GaAs Devices and Circuits

Part of the book series: Microdevices ((MDPF))

Abstract

In 1963 J. B. Gunn studied the current-voltage characteristics of GaAs and InP devices. He discovered that when the applied electric field

$$F = U/L$$
((4-1-1))

(where U is the bias voltage, L is the sample length) was greater than some critical value F t (~3kV/cm for GaAs and ~6kVJcm for InP), spontaneous current oscillations appeared in the circuit [1] (see Fig. 4–1–1). Later Gunn published the results of the detailed experimental study of this effect [2]. Using probe measurements of the potential distribution across the sample he established that a propagating high field domain forms in the sample when F ≤ F t . It nucleates near the cathode, propagates toward the anode with velocity of the order of 105m/s, and disappears near the anode (see Fig. 4–1–2). Then this process repeats itself. The domain formation leads to a current drop, the domain annihilation results in an increase in the current, and periodic current oscillations exist in the circuit.

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  1. University of Minnesota, Minneapolis, Minnesota, USA

    Michael Shur

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© 1987 Springer Science+Business Media New York

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Shur, M. (1987). Ridley-Watkins-Hilsum-Gunn Effect. In: GaAs Devices and Circuits. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1989-2_4

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  • DOI: https://doi.org/10.1007/978-1-4899-1989-2_4

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-1991-5

  • Online ISBN: 978-1-4899-1989-2

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