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Modulation Doped Field Effect Transistors

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GaAs Devices and Circuits

Part of the book series: Microdevices ((MDPF))

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Abstract

Modulation doped field effect transistors (MO DFETs), also called high electron mobility transistors (HEMTs) and selectively doped heterojunction transistors (SDHTs), have recently emerged as the fastest solid state devices. Ring oscillator propagation delay times as low as 10.2 ps at 300 K and 5.8 ps at 77 K have been demonstrated. MODFET frequency dividers have operated at up to 10.1 GHz input frequency. A 4-kb MODFET RAM has also been fabricated. (A more detailed discussion of the MODFET IC performance may be found in Chapter 9.)

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  1. University of Minnesota, Minneapolis, Minnesota, USA

    Michael Shur

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Shur, M. (1987). Modulation Doped Field Effect Transistors. In: GaAs Devices and Circuits. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1989-2_10

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  • DOI: https://doi.org/10.1007/978-1-4899-1989-2_10

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