Abstract
Charge carriers drift velocity is the most important factor affecting transistor operating speed. In this chapter we will examine the possibilities for achieving the highest drift velocity in semiconductors. The processes involved in scattering the charge carriers and saturating their drift velocity while immersed in strong electric fields under steady-state conditions are described first (Sec. 3.1). We next examine the dynamics of electron gas heating in a semiconductor and drift velocity overshoot during short periods of time (Sec. 3.2) and in short specimens (Sec. 3.3). Finally, we will analyze the ballistic transit of electrons injected at high initial velocity into a semiconductor (Sec. 3.4). The material in this chapter is essential to understanding the physics of transistor operation that will be developed in subsequent chapters and to evaluating possibilities for achieving maximum transistor operating speed.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
H. Budd, “Path variable formulation of the hot carrier problems,” Phys. Rev., 158, No. 3, 798–804 (1967).
P.A. Lebwohl and P.M. Marcus, “Hot electron distribution by direct integration of the Boltzmann equation,” Solid State Commun., 9, 1671–1674 (1971).
H. D. Rees, “Calculation of distribution functions by exploiting the stability of the steady state,” J. Phys. Chem. Sol., 30, No. 3, 643–655 (1969).
W. Fawcett, A. D. Boardman, and S. Swain, “Monte Carlo determination of electron transport properties in gallium arsenide,” J. Phys. Chem. Sol., 31, No. 9, 1963–1990 (1970).
M. A. Littlejohn, J. R. Hauser, and T. H. Glisson, “Velocity-field characteristics of GaAs with Гc e-Lc e-Xc e conduction-band disordering,” J. Appl. Phys., 48, No. 11, 4587–4590 (1977).
A. Matulionis, J. Požela, and A. Reklaitis, “The dynamics of electron heating,” in: Electrons in Semiconductors, Vol. I, Many-Valley Semiconductors, J. Požela (ed.) [in Russian], Mokslas, Vilnius (1978), pp. 7-58.
J. P. Nougier, J. C. Vaissiere, D. Gasque, et al., “Determination of transient regime of hot carriers in semiconductors using the relaxation time approximations,” J. Appl. Phys., 52, No. 2, 825–832 (1981).
V. Denis, A. Pauzha, J. Požela, et al., “Resistive sensors and converters for microwave pulse signals,” in: Electrons in Semiconductors, Vol. II, Semiconductor Converters, J. Požela (ed.) [in Russian], Mokslas, Vilnius (1980), pp. 9-72.
C. Jacoboni and L. Reggiani, “Bulk hot-electron properties of cubic semiconductors,” Adv. Phys., 28, No. 4, 493–553 (1979).
M. Shur, GaAs Devices and Circuits, Plenum Press, New York and London (1987).
C. J. Stanton and W. Wilkins, “Hot-electron noise in two-valley semiconductors: an analytic model,” Phys. Rev. B, 36, No. 3, 1686–1695 (1987).
M. Meyyappan, J. P. Kreskovsky, and H. L. Grubin, “Numerical simulation of an AlGaAs/GaAs bipolar inversion channel field effect transistor,” Solid-State Electron., 31, No. 6, 1023–1030 (1988).
H. T. Lam and G. A. Acket, “Comparison of the microwave velocity field characteristics of n-type InP and n-type GaAs,” Electron. Lett., 7, 722–723 (1971).
L. D. Nielsen, “Microwave measurement of electron drift velocity in indium phosphide for electric fields up to 50 kV/cm,” Phys. Lett., 38A, No. 4, 221 (1972).
Y. Cho, R. Sakamoto, and M. Inoue, “Real space hot electron distributions and transfer effects in heterostructures,” Solid-State Electron., 31, No. 3/4, 325–328 (1988).
Z. Dobrovolskis, K. Grigoras, and A. Krotkus, “Measurement of the hot-electron conductivity in semiconductors using ultra-fast electric pulses,” Appl. Phys. Lett. A, 48, No. 3, 245–249 (1989).
A. Yu. Dargis, Measuring Drift Velocity in Semiconductors [in Russian], Institute of Semiconductor Physics, Lithuanian Academy of Sciences, Mokslas, Vilnius (1987).
T. Sugano, T. Ikoma, and E. Takeisi, Introduction to Microelectronics [Russian translation], Mir, Moscow (1988).
C. Canali, M. Martini, G. Ottaviani, et al., “Time of flight measurement of the differential negative mobility in CdTe,” Phys. Lett., 33A, No. 4, 241–242 (1970).
A. Dargis, S. Zhilenis, A. Matulionis, et al., “Volt-ampere characteristics of graded bandgap AlxGa1-x As crystals,” Lit. Fiz. Sb., 17, No. 4, 493–500 (1977) [English translation: Sov. Phys. Collect., 17, No. 4, 63-67 (1977)].
J. Požela and A. Reklaitis, “Electron transport properties in GaAs at high electric fields” Solid-State Electron., 23, No. 9, 927–933 (1980).
L. Reggiani, “General theory,” in: Hot-Electron Transport in Semiconductors. Topics in Applied Physics, Vol. 58, L. Reggiani (ed.), Springer-Verlag, Berlin-Heidelberg-New York-Tokyo (1985), pp. 7–86.
E. Constant, “Non-steady state carrier transport in semiconductors in perspective with submicrometer devices,” in: Hot-Electron Transport in Semiconductors. Topics in Applied Physics, Vol. 58, L. Reggiani (ed.), Springer-Verlag, Berlin-Heidelberg-New York-Tokyo (1985), pp. 227–261.
J. Požhela, Plasma and Current Instabilities in Semiconductors, Pergamon Press, Oxford (1981).
A. Matulionis, J. Požela, and A. Reklaitis, “Electron runaway time during scattering by polar optical phonons,” FTP, 8, No. 9, 1830–1833 (1974).
A. Matulionis, J. Požela, and A. Reklaitis, “Modeling the dynamics of electron runaway by means of a multiparticle Monte Carlo method,” FTP, 9, No. 1, 178–180 (1975).
A. Matulionis and R. Milyushite, “The length of the passive near-cathode space in GaAs and InP,” Lit. Fiz. Sb., 2, No. 3, 293–297 (1986) [English translation: Sov. Phys. Collect., 26, No. 3, 28-31 (1986)].
J. G. Ruch, “Electron dynamics in a short channel field-effect transistor,” IEEE Trans. Electron Dev., ED-19, No. 5, 652–654 (1972).
A. Matulionis, J. Požela, and A. Reklaitis, “Monte Carlo calculations of hot electron transient behavior in CdTe and GaAs,” Phys. Stat. Sol. (a), 35, No. 1, 43–48 (1976).
H. D. Rees, “Time response of the high-field distribution function in GaAs,” IBM J. Res. Dev., 13, No. 5, 537–542 (1969).
A. Matulionis, J. Požela, and A. Reklaitis, “Drift velocity oscillations in GaAs at 77 K,” Phys. Stat. Sol. (a), 31, No. 1, 83–87 (1975).
P. A. Rolland, E. Constant, G. Salmer, et al., “Comparative frequency behavior of GaAs, InP, and GaInAs transferred electron device-derivation of a simple comparative criterion,” IEEE Trans. Electron Dev., ED-28, No. 3, 341–343 (1981).
A. Ghis, E. Constant, and B. Boittiaux, “Ballistic and overshoot electron transport in bulk semiconductors and in submicronic devices,” J. Appl. Phys., 54, No. 1, 214–221 (1983).
M. S. Shur and L. F. Eastman, “GaAs n +-p-n + ballistic structure,” Electron. Lett., 16, No. 13, 522–523 (1980).
C. Hamaguchi, “Hot electron transport in very short semiconductors,” Physica, 134B, 87–96 (1985).
T. Mori, C. Hamaguchi, A. Shibatomi, et al., “Hot electron effect in short n +-n-n + GaAs,” Jpn. J. Appl. Phys., 23, No. 2, 212–215 (1984).
K. Kibickas, J. Parseliũnas, and S. Vasiliauskas, “Transient hot electron phenomena in GaAs n +-n-n + structures at 300 K,” Phys. Stat. Sol. (a), 102, No. 1, K99–K10 (1987).
F. Capasso, “Compositionally graded semiconductors and their device applicationy,” Ann. Rev. Mater. Sci., 16, 263–291 (1986).
M. S. Lundstrom, S. Datta, S. Bandyopadhyay, et al., “Monte Carlo studies of repeated overshoot devices,” in: Physics and Modeling of Heterostructure Semiconductor Devices. Annual Report: June 1, 1985–July 31, 1986. Purdue University School of Electrical Engineering, Technical Report: TR-EE 86-31, Chapter 2, pp. 10-35.
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1993 Springer Science+Business Media New York
About this chapter
Cite this chapter
Požela, J. (1993). Maximum Drift Velocity in Semiconductors. In: Physics of High-Speed Transistors. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1242-8_3
Download citation
DOI: https://doi.org/10.1007/978-1-4899-1242-8_3
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4899-1244-2
Online ISBN: 978-1-4899-1242-8
eBook Packages: Springer Book Archive