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High-Speed Devices and Integrated Circuits

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Physics of High-Speed Transistors

Part of the book series: Microdevices ((MDPF))

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Abstract

In this chapter we will present the maximum speeds attained experimentally for the transistors that have been described. Only those results which represent the ultimate for a given transistor type having an operating speed greater than 100 psec or 10 GHz have been chosen. The maximum operating speed that can be achieved is discussed in Sec. 10.1 for all of the major transistor types. Logic gates and integrated circuits have been built upon transistors fabricated from A3B5 compounds and have operating speeds that are significantly higher than their silicon analogues. A few examples of these types of ICs will be examined in Sec. 10.2.

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  1. Institute of Semiconductor Physics, Lithuanian Academy of Sciences, Vilnius, Lithuania

    Juras Požela

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Požela, J. (1993). High-Speed Devices and Integrated Circuits. In: Physics of High-Speed Transistors. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1242-8_10

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