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On Electrical Properties of Chalcogenide Glassy Semiconductors in the Framework of Hubbard Model with Negative Correlation Energy

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The Hubbard Model

Part of the book series: NATO ASI Series ((NSSB,volume 343))

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Abstract

The concept1 of the native centres having the effective negative Hubbard correlation energy (NUC) well describes properties of chalcogenide glassy semiconductors (CGS)2–7.

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References

  1. P.W. Anderson, Model for electronic structure of amorphous semiconductors. Phys. Rev. Lett. 34:953 (1975).

    Article  ADS  Google Scholar 

  2. N.F Mott and E.A. Davis, “Electronic Processes in Non-Crystalline Materials”, Clarendon Press, Oxford (1979).

    Google Scholar 

  3. M.I. Klinger, Glassy disordered systems: Topology, atomic dynamics and localized electron states, Phys. Repts. 165:275 (1988).

    Article  ADS  Google Scholar 

  4. S.D. Savransky, Charge carriers kinetics during glass transition, Fiz. Khim. Stekla (Soviet J. Phys. Chem. Glasses) 13:659 (1987). (On Russian).

    Google Scholar 

  5. S.D. Savransky, Local pairs superconductivity in glassy and crystalline As2Te3, Solid State Communications 79:843 (1991).

    Article  ADS  Google Scholar 

  6. S.D. Savransky, Hopping Auger recombination at the negative U centres in amorphous semiconductors, Philosophical Magazine Letters. 66:91 (1992).

    Article  ADS  Google Scholar 

  7. B.L. Gelmont, B.T. Kolomiets and K.D. Tsendin, Impurity conduction of chalcogenide vitreous semiconductors, Physica Status Solidi A91:319 (1985).

    ADS  Google Scholar 

  8. B.T. Kolomiets, V.M. Luibin, and V.P. Shilo, Anisotropy of electrical conductivity in chalcogenide glassy fibers, Pis’ma ZhETF (Soviet Phys. JETP Lett.) 17:577 (1973).

    ADS  Google Scholar 

  9. R. Micnas, J. Ranninger and S. Robaszkiewicz, Superconductivity in narrow-band systems with local attractive interactions, Rev. Mod. Phys. 62:113 (1990).

    Article  ADS  Google Scholar 

  10. G.A. Bordovsky and M.R. Kanichev, Capacitance spectroscopy of localized states in chalcogenide glassy semiconductors, Fizika i Techn. Poluprovodn. (Soviet Phys. Semiconductors) 24:527 (1990).

    Google Scholar 

  11. J.J. Hauser, Conductivity (ac and dc) in III–V amorphous semiconductors and chalcogenide glasses, Phys. Rev. B. 31:2133 (1985).

    Article  MathSciNet  ADS  Google Scholar 

  12. G. Pfister and H. Scher, Time-dependent electrical transport in amorphous solids: As2Se3, Phys. Rev. B. 15:2062 (1977).

    Article  ADS  Google Scholar 

  13. J.H. Ziman “Principles of the Theory of Solids”, Cambridge University Press, Cambridge (1972).

    Book  Google Scholar 

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Author information

Authors and Affiliations

  1. Departamento de Fisica de Materiales, Apdo. 1072, Universidad del Pais Vasco, San Sebastian, Spain

    Semën Savransky

Authors
  1. Semën Savransky
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Editor information

Editors and Affiliations

  1. University of Fribourg, Fribourg, Switzerland

    Dionys Baeriswyl

  2. University of Illinois at Urbana-Champaign, Urbana, Illinois, USA

    David K. Campbell

  3. University of Madrid, Madrid, Spain

    Jose M. P. Carmelo  & Francisco Guinea  & 

  4. University of Alicante, Alicante, Spain

    Enrique Louis

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© 1995 Springer Science+Business Media New York

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Savransky, S. (1995). On Electrical Properties of Chalcogenide Glassy Semiconductors in the Framework of Hubbard Model with Negative Correlation Energy. In: Baeriswyl, D., Campbell, D.K., Carmelo, J.M.P., Guinea, F., Louis, E. (eds) The Hubbard Model. NATO ASI Series, vol 343. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-1042-4_41

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  • DOI: https://doi.org/10.1007/978-1-4899-1042-4_41

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4899-1044-8

  • Online ISBN: 978-1-4899-1042-4

  • eBook Packages: Springer Book Archive

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