On Electrical Properties of Chalcogenide Glassy Semiconductors in the Framework of Hubbard Model with Negative Correlation Energy
Part of the NATO ASI Series book series (NSSB, volume 343)
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The concept1 of the native centres having the effective negative Hubbard correlation energy (NUC) well describes properties of chalcogenide glassy semiconductors (CGS)2–7.
KeywordsHubbard Model Amorphous Semiconductor Soft Potential Extended Hubbard Model Negative Correlation Energy
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- 2.N.F Mott and E.A. Davis, “Electronic Processes in Non-Crystalline Materials”, Clarendon Press, Oxford (1979).Google Scholar
- 4.S.D. Savransky, Charge carriers kinetics during glass transition, Fiz. Khim. Stekla (Soviet J. Phys. Chem. Glasses) 13:659 (1987). (On Russian).Google Scholar
- 10.G.A. Bordovsky and M.R. Kanichev, Capacitance spectroscopy of localized states in chalcogenide glassy semiconductors, Fizika i Techn. Poluprovodn. (Soviet Phys. Semiconductors) 24:527 (1990).Google Scholar
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